| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| SI1553DL-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V SC70-6 | 0 | 3,000:$0.17825 6,000:$0.16675 15,000:$0.15525 30,000:$0.14663 75,000:$0.14375 150,000:$0.13800 |
| SI1902DL-T1-GE3 | Vishay Siliconix | MOSFET N-CH G-S 20V DUAL SC-70-6 | 0 | 1:$0.63000 25:$0.43880 100:$0.37620 250:$0.32492 500:$0.27930 1,000:$0.21660 |
| SI1902DL-T1-GE3 | Vishay Siliconix | MOSFET N-CH G-S 20V DUAL SC-70-6 | 0 | 1:$0.63000 25:$0.43880 100:$0.37620 250:$0.32492 500:$0.27930 1,000:$0.21660 |
| SI1902DL-T1-GE3 | Vishay Siliconix | MOSFET N-CH G-S 20V DUAL SC-70-6 | 0 | 3,000:$0.17670 6,000:$0.16530 15,000:$0.15390 30,000:$0.14535 75,000:$0.14250 150,000:$0.13680 |
| SI1033X-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 20V 145MA SC89 | 0 | 3,000:$0.16740 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | N 和 P 溝道 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續漏極(Id) @ 25° C: | 660mA，410mA |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 385 毫歐 @ 660ma，4.5V |
| Id 時的 Vgs(th)（最大）: | 600mV @ 250µA |
| 閘電荷(Qg) @ Vgs: | 1.2nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 270mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 6-TSSOP，SC-88，SOT-363 |
| 供應商設備封裝: | SC-70-6 |
| 包裝: | 帶卷 (TR) |