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參數資料
| 型號： | DZT851-13 |
| 廠商： | DIODES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SURFACE MOUNT TRANSISTOR |
| 中文描述： | 6000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | GREEN, PLASTIC PACKAGE-4 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 144K |
| 代理商： | DZT851-13 |
DZT851
NPN SURFACE MOUNT TRANSISTOR
N
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (DZT951)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT-223
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams (approximate)
SOT-223
COLLECTOR
BASE
EMITTER
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
150
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
60
V
Emitter-Base Voltage
6
V
Continuous Collector Current
6
A
Power Dissipation
P
tot
1(Note 3)
3(Note 4)
W
Operating and Storage Temperature Range
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 4.
4. The power which can be dissipated, assuming the device is mounted in a typical manner on a PCB with copper equal to 4 square inch minimum.
T
j
, T
STG
-55 to +150
°C
DS30738 Rev. 3 - 2
1 of 4
www.diodes.com
DZT851
Diodes Incorporated
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相關代理商/技術參數 |
參數描述 |
|---|---|
| DZT853 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN SURFACE MOUNT TRANSISTOR |
| DZT853-13 | 功能描述:兩極晶體管 - BJT 1W 100V 6A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| DZT951 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SURFACE MOUNT TRANSISTOR |
| DZT951-13 | 功能描述:兩極晶體管 - BJT 1W -60V -5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| DZT953 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SURFACE MOUNT TRANSISTOR |
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