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參數資料
| 型號： | E30A2CS |
| 廠商： | KEC Holdings |
| 英文描述： | STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE) |
| 中文描述： | 堆棧擴散硅二極管（發電機二極管汽車） |
| 文件頁數： | 1/1頁 |
| 文件大?。?/td> | 58K |
| 代理商： | E30A2CS |
1998. 2. 19
1/1
SEMICONDUCTOR
TECHNICAL DATA
E30A2CPS, E30A2CPR
STACK SILICON DIFFUSED DIODE
Revision No : 0
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : IO=30A.
Reverse Voltage : 200V(Min.)
POLARITY
E30A2CPS (+ Type)
E30A2CPR (- Type)
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
A
B
D
E
1.55
PF
Φ11.7+0.1/-0
3.85+0/-0.2
Φ1.45 0.1
D
L1
B
G
L2
E
F1
F2
A
0.5
3.1
8.4 MAX
G
F2
L1
0.32
MILLIMETERS
DIM
F1
L2
DIM
MILLIMETERS
TYPE
R
S
POLARITY
21.5+0/-1.5
17.5+0/-1.5
+_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Peak Forward Voltage
VFM
IFM=100A
-
1.17
V
Reverse Voltage
VRM
IR=5mA
200
-
V
Repetitive Peak Reverse Current
IRRM
VR=200V
-
50
A
Reverse Recovery Time
trr
IF=-IR 100mA
-
15
S
Transient Thermal Resistance
VF
IFM=100A, Im=100mA,
Pt=100mS
-
140
mV
Reverse Leakage Current Under
High Temperature
HIR
Ta=150 , VR=VRM
-
2.5
mA
Temperature Resistance
Rth
Junction to Case
-
0.86
/W
Junction to Fin
-
1.07
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak
Reverse Voltage
VRRM
200
V
Non-Repetitive Peak
Reverse Voltage
PRM
1.35
(Pulse duration 30 S
Non-repetitive)
kW
Average Forward Current
IF(AV)
30
A
Peak 1 Cycle Surge Current
IFSM
350
(10mS Condition
Half sine wave 1 cycle)
A
Junction Temperature
Tj
-40 200
Storage Temperature Range
Tstg
-40 200
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