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參數(shù)資料
| 型號(hào)： | E |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | RF PIN Diode |
| 中文描述： | 射頻PIN二極管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 49K |
| 代理商： | E |
VISHAY
BAR65V-02V
Vishay Semiconductors
Document Number 85644
Rev. 1, 23-Oct-02
www.vishay.com
1
16863
C
A
RF PIN Diode
Mechanical Data
Case:
Plastic case (SOD 523)
Weight:
1.5 mg
Cathode Band Color:
Laser marking
Packaging Codes/Options:
GS08 / 3 k per 7" reel (8 mm tape), 3 k/Box
Description
With the very low forward resistance combined with a
low reverse capacitance the BAR65V-02V is ideal for
RF-signal switching. Depending on the forward cur-
rent (If) the forward resistance (rf) can be reduced to
only a few hundred m
. Driven In the reverse mode
the "switch is off" , the isolation capacitance is less
than 1pF. Typical applications for this PIN Diode are
wireless, mobile and TV-systems.
Features
Space saving SOD523 package with low series
inductance
Very low forward resistance
Small reverse capacitance
Applications
For frequency up to 3 GHz
RF-signal switching
Mobile, wireless and TV-Applications
Parts Table
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction soldering point
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
Part
Ordering code
Marking
Remarks
Package
BAR65V-02V
BAR65V-02V-GS08
E
Tape and Reel
SOD523
Test condition
Sub type
Symbol
V
R
I
F
T
j
T
stg
Value
30
Unit
V
Forward current
100
mA
Junction temperature
150
°C
Storage temperature range
- 55 to +
150
°C
Test condition
Symbol
R
thJS
Value
100
Unit
K/W
Test condition
Sub type
Symbol
V
R
I
R
V
F
Min
30
Typ.
Max
Unit
V
I
R
= 10 μA
V
R
= 20 V
I
F
= 100 mA
Reverse current
20
nA
Forward voltage
1.1
V
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