
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
August 2004
ECP052
Watt, High Linearity InGaP HBT Amplifier
Product Information
The Communications Edge
TM
Product Features
800 – 1000 MHz
+28.5 dBm P1dB
+44 dBm Output IP3
18 dB Gain @ 900 MHz
Single Positive Supply (+5V)
Available in SOIC-8 or 16pin
4mm QFN package
Applications
Final stage amplifiers for
Repeaters
Mobile Infrastructure
Product Description
The ECP052 is a high dynamic range driver amplifier in
a low-cost surface mount package. The InGaP/GaAs
HBT is able to achieve high performance for various
narrowband-tuned application circuits with up to +44
dBm OIP3 and +28.5 dBm of compressed 1dB power. It
is housed in an industry standard SOIC-8 or 16-pin
4x4mm QFN SMT package. All devices are 100% RF
and DC tested.
The ECP052 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
ECP052 to maintain high linearity over temperature and
operate directly off a single +5V supply. This
combination makes the device an excellent candidate for
transceiver line cards in current and next generation
multi-carrier 3G base stations.
Functional Diagram
V
N
ECP052D
ECP052G
Specifications
(1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Output P1dB
Output IP3
(2)
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(2)
IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
Noise Figure
Operating Current Range, Icc
(3)
Device Voltage, Vcc
Units Min
MHz
MHz
dB
dBm
dBm
MHz
dB
dB
dB
dBm
dBm
Typ
850
17
+28
+44
900
17.8
18
7
+28.7
+43
Max
1000
800
15.5
+27
+42.5
15.5
+27
+42.5
dBm
+23
dB
mA
V
7
200
250
+5
300
1. Test conditions unless otherwise noted: 25oC, Vsupply = +5 V, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 50 mA at P1dB. Pin 1 is used as a
reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 12mA of current when used with a series bias resistor of R1=100
. (ie. total device current typically will be 262 mA.)
Absolute Maximum Rating
Ordering Information
Parameters
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Rating
-40 to +85
°
C
-65 to +150
°
C
+28 dBm
+8 V
400 mA
2 W
Part No.
ECP052D
ECP052G
ECP052D-PCB900 900 MHz Evaluation Board
ECP052G-PCB900 900 MHz Evaluation Board
Description
Watt InGaP HBT Amplifier (16p 4mm Pkg)
Watt InGaP HBT Amplifier (SOIC-8 Pkg)
Operation of this device above any of these parameters may cause permanent damage.
1
2
3
4
12
11
10
9
16
15
14
13
5
6
7
8
N/C
RF OUT
RF OUT
N/C
Vref
N/C
RF IN
N/C
N
N
N
N
N
N
1
2
3
4
8
7
6
5
Vref
N/C
RF IN
N/C
Vbias
RF OUT
RF OUT
N/C