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參數資料
| 型號： | EDD5116ADTA-5C |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | REC3-SR_DR/H1 Series - Econoline Regulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 15V; Power: 3W; Low Cost 3W converter in DIP24 Package; 1kVDC Isolation; Regulated Output; UL Approved; Continuous Short Circuit Protection; Internal SMD design; 3 Pinout Options, 3 Case Styles.; Efficiency to 75% |
| 中文描述： | 32M X 16 DDR DRAM, 0.7 ns, PDSO66 |
| 封裝： | PLASTIC, TSOP2-66 |
| 文件頁數： | 1/48頁 |
| 文件大小： | 555K |
| 代理商： | EDD5116ADTA-5C |
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Document No. E539E10 (Ver. 1.0)
Date Published June 2004 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2004
PRELIMINARY DATA SHEET
512M bits DDR SDRAM
EDD5108ADTA-5C (64M words
×
8 bits, DDR400)
EDD5116ADTA-5C (32M words
×
16 bits, DDR400)
Description
The EDD5108AD and the EDD5116AD are 512M bits
Double Data Rate (DDR) SDRAM, organized as
16,777,216 words
×
8 bits
×
4 banks and 8,388,608
words
×
16 bits
×
4 banks, respectively.
Read and write operations are performed at the cross
points of the CK and the /CK. This high-speed data
transfer is realized by the 2 bits prefetch-pipelined
architecture. Data strobe (DQS) both for read and
write are available for high speed and reliable data bus
design. By setting extended mode register, the on-chip
Delay Locked Loop (DLL) can be set enable or disable.
They are packaged in standard 66-pin plastic TSOP(II).
Features
Power supply: VDD ,VDDQ = 2.6V
±
0.1V
Data rate: 400Mbps (max.)
Double Data Rate architecture; two data transfers per
clock cycle
Bi-directional data strobe (DQS) is transmitted
/received with data for capturing data at the receiver
Data inputs, outputs, and DM are synchronized with
DQS
4 internal banks for concurrent operation
DQS is edge aligned with data for READs; center
aligned with data for WRITEs
Differential clock inputs (CK and /CK)
DLL aligns DQ and DQS transitions with CK
transitions
Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
Data mask (DM) for write data
Auto precharge option for each burst access
SSTL_2 compatible I/O
Programmable burst length (BL): 2, 4, 8
Programmable /CAS latency (CL): 3
Programmable output driver strength: normal/weak
Refresh cycles: 8192 refresh cycles/64ms
7.8
μ
s maximum average periodic refresh interval
2 variations of refresh
Auto refresh
Self refresh
Pin Configurations
/xxx indicates active low signal.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
66-pin Plastic TSOP(II)
(Top view)
VDD
DQ0
VDDQ
NC
DQ1
VSSQ
NC
DQ2
VDDQ
NC
DQ3
VSSQ
NC
NC
VDDQ
NC
NC
VDD
NC
NC
/WE
/CAS
/RAS
/CS
NC
BA0
BA1
A10(AP)
A0
A1
A2
A3
VDD
VSS
DQ7
VSSQ
NC
DQ6
VDDQ
NC
DQ5
VSSQ
NC
DQ4
VDDQ
NC
NC
VSSQ
DQS
NC
VREF
VSS
DM
/CK
CK
CKE
NC
A12
A11
A9
A8
A7
A6
A5
A4
VSS
X 16
X 8
Address input
Bank select address
Data-input/output
Input and output data strobe
Chip select
Row address strobe command
Column address strobe command
Write enable
Input mask
Clock input
Differential clock input
Clock enable
Input reference voltage
Power for internal circuit
Ground for internal circuit
Power for DQ circuit
Ground for DQ circuit
No connection
A0 to A12
BA0, BA1
DQ0 to DQ15
DQS, LDQS, UDQS
/CS
/RAS
/CAS
/WE
DM, LDM, UDM
CK
/CK
CKE
VREF
VDD
VSS
VDDQ
VSSQ
NC
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
NC
VSSQ
UDQS
NC
VREF
VSS
UDM
/CK
CK
CKE
NC
A12
A11
A9
A8
A7
A6
A5
A4
VSS
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
NC
VDDQ
LDQS
NC
VDD
NC
LDM
/WE
/CAS
/RAS
/CS
NC
BA0
BA1
A10(AP)
A0
A1
A2
A3
VDD
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| EDD5116ADTA-6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR SDRAM |
| EDD5116ADTA-6B-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR SDRAM |
| EDD5116ADTA-6BL | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR SDRAM |
| EDD5116ADTA-6BL-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits DDR SDRAM |
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