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參數資料
| 型號： | EE-SJ3-D |
| 廠商： | Omron Electronics LLC |
| 英文描述： | Photomicrosensor (Transmissive) |
| 中文描述： | Photomicrosensor（透射） |
| 文件頁數： | 1/3頁 |
| 文件大小： | 430K |
| 代理商： | EE-SJ3-D |
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Dimensions
Tolerance
3 mm max.
±
0.3
3
<
mm
≤
6
±
0.375
6
<
mm
≤
10
±
0.45
10
<
mm
≤
18
±
0.55
18
<
mm
≤
30
±
0.65
Internal Circuit
K
A
C
E
Unless otherwise specified, the
tolerances are as shown below.
Model
EE-SJ3-C
EE-SJ3-D
EE-SJ3-G
Aperture (a x b)
2.1 x 1.0
2.1 x 0.2
0.5 x 2.1
Four, 0.5
Four, 0.25
Center mark
Cross section BB
Cross section AA
7.2
±
0.2
2.54
±
0.2
7.6
±
0.3
6
0.2
10.2
6.2
0.3
Photomicrosensor
(Transmissive)
Features
High-resolution model with a 0.2-mm-wide sensing
aperture, high-sensitivity model with a 1-mm-wide sensing
aperture, and model with a horizontal sensing aperture
are available.
All models have a 3 mm wide slot.
EE-SJ3 Series
Dimensions
Note:
All units are in millimeters unless otherwise indicated.
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Forward current
Symbol
I
F
Rated value
50 mA
(see note 1)
1 A
(see note 2)
4 V
30 V
Emitter
Pulse forward
current
Reverse voltage
Collector--Emitter
voltage
Emitter--Collector
voltage
Collector current
Collector
dissipation
Operating
Storage
I
FP
V
R
V
CEO
Detector
V
ECO
---
I
C
P
C
20 mA
100 mW
(see note 1)
--25
°
C to 85
°
C
--30
°
C to 100
°
C
260
°
C
(see note 3)
Amb e
temperature
Topr
Tstg
Tsol
Soldering temperature
Note:
1. Refer to the temperature rating chart if the ambient
temperature exceeds 25
°
C.
2. Thepulsewidthis 10
μ
s maximumwithafrequency
of 100 Hz.
3. Complete soldering within 10 seconds.
Ordering Information
Description
Part number
EE-SJ3-C
EE-SJ3-D
EE-SJ3-G
Photomicrosensor (Transmissive)
o o
c ose so (
a s
ss e)
Electrical and Optical Characteristics (Ta = 25
°
C)
Item
Symbol
Value
Condition
Co d o
EE-SJ3-C
1.2 V typ., 1.5 V max.
0.01
μ
A typ., 10
μ
A max.
940 nm typ.
EE-SJ3-D
EE-SJ3-G
Emitter
Forward voltage
Reverse current
Peak emission
wavelength
Light current
Dark current
Leakage current
Collector--Emitter
saturated voltage
Peak spectral sensitivity
wavelength
V
F
I
R
λ
P
I
F
= 30 mA
V
R
= 4 V
I
F
= 20 mA
Detector
I
L
I
D
I
LEAK
V
CE
(sat)
1 to 28 mA typ.
2 nA typ., 200 nA max.
---
0.1 V typ.,
0.4 V max.
850 nm typ.
0.1 mA min.
0.5 to 14 mA
I
F
= 20 mA, V
CE
= 10 V
V
CE
= 10 V, 0
x
---
I
F
= 20 mA,
I
L
= 0.1 mA
V
CE
= 10 V
---
0.1 V typ.,
0.4 V max.
λ
P
Rising time
tr
4
μ
s typ.
V
CC
= 5 V,
R
L
= 100
,
I
L
= 5 mA
Falling time
tf
4
μ
s typ.
相關PDF資料 |
PDF描述 |
|---|---|
| EE-SJ3-G | Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0515-0 00; No. of Positions: 32; Connector Type: Wire; Contact Gender: Female; Contact Spacing (mm): 2; Terminal Pitch (mm): 2; Current Rating(Amps)(Max.): 2; Operating Temperature Range (degrees C): -30 to 85; General Description: Housing; For Discrete wire; Crimping |
| EE-SJ3 | Photomicrosensor (Transmissive) |
| EE-SX1055 | Opto-Switch |
| EE-SX4134 | Photomicrosensor (Transmissive) |
| EE-SX470 | Photomicrosensor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| EESJ3G | 制造商:Omron Electronic Components LLC 功能描述:NON-AMPLIFIED SENSOR - Bulk 制造商:Omron Electronic Components LLC 功能描述:SENSR OPTO SLOT 3.4MM TRANS THRU 制造商:Omron Electronic Components LLC 功能描述:Photointerrupter Transmissive 3.4mm Phototransistor 4-Pin |
| EE-SJ3-G | 功能描述:光學開關（透射型，光電晶體管輸出） PHOTO MICROSENSOR RoHS:否 制造商:Omron Electronics 輸出設備:Phototransistor 槽寬:3.4 mm 光圈寬度:0.5 mm 集電極—發射極最大電壓 VCEO:30 V 最大集電極電流:20 mA 正向電流: 安裝風格:Through Hole 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 封裝: |
| EESJ3WB | 功能描述:光學開關（透射型，光電晶體管輸出） RoHS:否 制造商:Omron Electronics 輸出設備:Phototransistor 槽寬:3.4 mm 光圈寬度:0.5 mm 集電極—發射極最大電壓 VCEO:30 V 最大集電極電流:20 mA 正向電流: 安裝風格:Through Hole 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 封裝: |
| EE-SJ3W-B | 制造商:Omron Corporation 功能描述:PHOTO MICROSENSOR |
| EESJ5B | 制造商:Omron Electronic Components LLC 功能描述:PHOTO MICROSENSOR - Bulk 制造商:Omron Electronic Components LLC 功能描述:SENSOR OPTO SLOT 5MM TRANS THRU 制造商:Omron Electronic Components LLC 功能描述:Photointerrupter Transmissive 5mm Phototransistor 4-Pin |
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