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參數資料
| 型號： | EE-SM3B |
| 廠商： | Omron Electronics Inc-EMC Div |
| 文件頁數： | 1/4頁 |
| 文件大小： | 230K |
| 描述： | OPTO SENSOR SLOT TYPE 3MM PCB |
| 標準包裝： | 100 |
| 檢測距離： | 0.118"（3mm） |
| 檢測方法： | 可傳導的 |
| 輸出配置： | 光電達林頓管 |
| 電流 - DC 正向(If)： | 15mA |
| 電流 - 集電極 (Ic)（最大）： | 20mA |
| 電壓 - 集電極發射極擊穿（最大）： | 24V |
| 響應時間： | 180µs，60µs |
| 安裝類型： | 通孔 |
| 封裝/外殼： | PCB 安裝 |
| 包裝： | 散裝 |
| 類型： | 無放大 |
| 工作溫度： | -20°C ~ 60°C |
| 其它名稱： | EESM3B |
202 Photomicrosensor (Transmissive) EE-SM3B
Photomicrosensor (Transmissive)
EE-SM3B (To be discontinued April 2006)
I Dimensions
Note:All units are in millimeters unless otherwise indicated.
I Features
"General-purpose model with a 3-mm-wide slot.
"PCB mounting type.
"With a red LED as an emitter element and a Photo-Darlington tran-
sistor as a detector element.
I Absolute Maximum Ratings (Ta=25?SPAN class="pst EE-SM3B_2584544_7">C)
Note:1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25癈.
2. Complete soldering within 10 seconds.
I Ordering Information
I Electrical and Optical Characteristics (Ta = 25?SPAN class="pst EE-SM3B_2584544_7">C)
Internal Circuit
Terminal No. Name
A
Anode
K
Cathode
C
Collector
E
Emitter
K
A
C
E
Dimensions Tolerance
3 mm max.
?.3
3 < mm d 6
?.375
6 < mm d 10 ?.45
10 < mm d 18 ?.55
18 < mm d 30 ?.65
Unless otherwise specified, the
tolerances are as shown below.
Two, 3.2?.2 dia. holes
Four, 0.45
Two, C1.7
6 min.
Four, 0.45
Cross section AA
Cross section BB
19?.15
7.2?.2
6.5?.2
2.54?.2
Item
Symbol Rated value
Emitter Forward current I
F
15 mA (seenote 1)
Pulse forward
current
I
FP
---
Reverse voltage V
R
4 V
Detector CollectorEmitter
voltage
V
CEO
24 V
EmitterCollector
voltage
V
ECO
---
Collector current I
C
20 mA
Collector
dissipation
P
C
75 mW
(seenote 1)
Ambient
temperature
Operating
Topr 20癈 to 60癈
Storage
Tstg 20癈 to 80癈
Soldering temperature
Tsol 260癈 (see note 2)
Description
Model
Photomicrosensor (transmissive) EE-SM3B
Item
Symbol
Value
Condition
Emitter Forward voltage
V
F
2.0 V typ., 2.6 V max.
I
F
= 15 mA
Reverse current
I
R
0.01 礎 typ., 5 礎 max.
V
R
= 4 V
Peak emission wavelength
?/DIV>
P
700 nm typ.
I
F
= 3 mA
Detector Light current
I
L
1.5 mA min., 120 mA max.
I
F
= 3 mA, V
CE
= 10 V
Dark current
I
D
2 nA typ., 250 nA max.
V
CE
= 10 V, 0 lx
Leakage current
I
LEAK
---
---
CollectorEmitter saturated
voltage
V
CE
(sat) 0.9 V typ.
I
F
= 3 mA, I
L
= 0.5 mA
Peak spectral sensitivity
wavelength
?/DIV>
P
800 nm typ.
V
CE
= 10 V
Rising time
tr
180 祍 typ.
V
CC
= 5 V, R
L
= 100 &,
I
L
= 10 mA
Falling time
tf
60 祍 typ.
V
CC
= 5 V, R
L
= 100 &,
I
L
= 10 mA
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相關代理商/技術參數 |
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|---|---|
| EE-SM3B | 制造商:Omron Electronic Components LLC 功能描述:OPTO SWITCH SLOTTED |
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| EE-SM8 | 功能描述:光電晶體管 PHOTO MICROSENSOR RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| EESMR11 | 制造商:Omron Electronic Components LLC 功能描述:PHOTOINTERRUPTER REFLECTIVE PHOTOTRANSISTOR 4PIN TO-18 - Bulk 制造商:Omron Electronic Components LLC 功能描述:Photointerrupter Reflective Phototransistor 4-Pin TO-18 |
| EE-SMR1-1 | 制造商:OMRON Electronic Components LLC 功能描述: |
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