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參數(shù)資料
| 型號(hào)： | EE-SX1105 |
| 元件分類： | 開(kāi)關(guān) |
| 英文描述： | 2 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT |
| 封裝： | ROHS COMPLIANT PACKAGE-4 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 98K |
| 代理商： | EE-SX1105 |
58
EE-SX1105
Photomicrosensor (Transmissive)
Photomicrosensor (Transmissive)
EE-SX1105
■
Dimensions
Note:
All units are in millimeters unless otherwise indicated.
■
Features
Ultra-compact with a sensor width of 4.9 mm and a slot width of
2 mm.
Low-height of 3.3 mm.
PCB mounting type.
High resolution with a 0.4-mm-wide aperture.
■
Absolute Maximum Ratings (Ta = 25
°
C)
Note:
1.
Refer to the temperature rating chart if the ambient tem-
perature exceeds 25
°
C.
2.
Complete soldering within 3 seconds.
■
Electrical and Optical Characteristics (Ta = 25
°
C)
Internal Circuit
Four, 0.5
Four, 0.4
Two, C0.7
Optical
axis
Gate
Two, R0.15
Two, R0.3
Cross section AA
Four,
5 min.
Terminal No. Name
A
K
C
E
Anode
Cathode
Collector
Emitter
Unless otherwise specified,
the tolerances are
±
0.2 mm.
Item
Forward current
Symbol
I
F
Rated value
50 mA
(see note 1)
---
Emitter
Pulse forward
current
Reverse voltage
Collector–Emitter
voltage
Emitter–Collector
voltage
Collector current
Collector
dissipation
Operating
Storage
I
FP
V
R
V
CEO
5 V
30 V
Detector
V
ECO
4.5 V
I
C
P
C
30 mA
80 mW
(see note 1)
–25
°
C to 85
°
C
–30
°
C to 85
°
C
260
°
C
(see note 2)
Ambient tem-
perature
Topr
Tstg
Tsol
Soldering temperature
Item
Symbol
Value
Condition
Emitter
Forward voltage
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
Collector–Emitter saturated volt-
age
Peak spectral sensitivity wave-
length
V
F
I
R
λ
P
I
L
I
D
I
LEAK
V
CE
(sat)
1.3 V typ., 1.6 V max.
10
μ
A max.
950 nm typ.
0.2 mA min.
500 nA max.
---
0.4 V max.
I
F
= 50 mA
V
R
= 5 V
I
F
= 50 mA
I
F
= 20 mA, V
CE
= 5 V
V
CE
= 10 V, 0
l
x
---
I
F
= 20 mA, I
L
= 0.1 mA
Detector
λ
P
800 nm typ.
V
CE
= 5 V
Rising time
tr
10
μ
s typ.
V
= 5 V, R
L
= 100
Ω
,
I
F
= 20 mA
V
= 5 V, R
L
= 100
Ω
,
I
F
= 20 mA
Falling time
tf
10
μ
s typ.
Be sure to read
Precautions
on page 25.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EESX1106 | 制造商:Omron Electronic Components LLC 功能描述:NON-AMPLIFIED SENSOR - Bulk 制造商:Omron Electronic Components LLC 功能描述:OPTO SWITCH TRANSMISSIVE 制造商:Omron Electronic Components LLC 功能描述:OPTO SWITCH, TRANSMISSIVE 制造商:Omron Electronic Components LLC 功能描述:Photointerrupter Transmissive 3mm Phototransistor 4-Pin |
| EE-SX1106 | 功能描述:光學(xué)開(kāi)關(guān)（透射型，光電晶體管輸出） TRANSMISSIVE RoHS:否 制造商:Omron Electronics 輸出設(shè)備:Phototransistor 槽寬:3.4 mm 光圈寬度:0.5 mm 集電極—發(fā)射極最大電壓 VCEO:30 V 最大集電極電流:20 mA 正向電流: 安裝風(fēng)格:Through Hole 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 封裝: |
| EESX1107 | 制造商:Omron Electronic Components LLC 功能描述:NON-AMPLIFIED SENSOR - Trays 制造商:Omron 功能描述:Bulk 制造商:Omron Electronic Components LLC 功能描述:OPTO SWITCH TRANSMISSIVE 制造商:Omron Electronic Components LLC 功能描述:OPTO SWITCH, TRANSMISSIVE 制造商:Omron Electronic Components LLC 功能描述:Photointerrupter Transmissive 1mm Phototransistor 4-Pin T/R |
| EE-SX1107 | 功能描述:光學(xué)開(kāi)關(guān)（透射型，光電晶體管輸出） TRANSMISSIVE RoHS:否 制造商:Omron Electronics 輸出設(shè)備:Phototransistor 槽寬:3.4 mm 光圈寬度:0.5 mm 集電極—發(fā)射極最大電壓 VCEO:30 V 最大集電極電流:20 mA 正向電流: 安裝風(fēng)格:Through Hole 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 封裝: |
| EESX1108 | 制造商:Omron Electronic Components LLC 功能描述:NON-AMPLIFIED SENSOR - Bulk 制造商:Omron Electronic Components LLC 功能描述:OPTO SENSOR SLOT TYPE 2MM SMT 制造商:Omron Electronic Components LLC 功能描述:Photointerrupter Transmissive 2mm Phototransistor 4-Pin T/R |
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