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參數資料
| 型號： | EFC480C |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Low Distortion GaAs Power FET |
| 中文描述： | 低失真GaAs功率場效應管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 33K |
| 代理商： | EFC480C |
Excelics
EFC480C
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 80mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
+33.5dBm TYPICAL OUTPUT POWER
18.0dB TYPICAL POWER GAIN AT 2GHz
High BVgd FOR 10V BIAS
0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION AND PLATED HEAT SINK
ADVANCED EPITAXIAL DOPING PROFILE
SYMBOLS
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression f= 2GHz
Vds=8V, Ids=50% Idss f= 4GHz
Gain at 1dB Compression f= 2GHz
Vds=8V, Ids=50% Idss f= 4GHz
Gain at 1dB Compression
Vds=8V, Ids=50% Idss f= 2GHz
MIN
32.0
TYP
33.5
33.5
18.0
12.5
40
MAX
UNIT
P
1dB
dBm
G
1dB
16.0
dB
PAE
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
640
960
1440
mA
Gm
Transconductance Vds=3V, Vgs=0V
200
560
mS
Vp
Pinch-off Voltage Vds=3V, Ids=10mA
-2.5
-4.0
V
BVgd
Drain Breakdown Voltage Igd=4.8mA
-15
-20
V
BVgs
Source Breakdown Voltage Igs=4.8mA
-10
-17
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
12
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Ids
Drain Current
Igsf
Forward Gate Current
Pin
Input Power
Tch
Channel Temperature
Tstg
Storage Temperature
Pt
Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
ABSOLUTE
1
14V
-8V
Idss
120mA
32dBm
175
o
C
-65/175
o
C
11.4 W
CONTINUOUS
2
10V
-4.5V
960mA
20mA
@3dB Compression
150
o
C
-65/150
o
C
9.5 W
Chip Thickness: 75
±
13 microns
All Dimensions In Microns
'
'
*
*
6
6
6
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