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參數資料
| 型號： | EGP30D-E3/54 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 3 A, 200 V, SILICON, RECTIFIER DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC, GP20, 2 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 73K |
| 代理商： | EGP30D-E3/54 |
Document Number: 88584
Revision: 15-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
www.vishay.com
1
Glass Passivated Ultrafast Rectifier
EGP30A thru EGP30G
Vishay General Semiconductor
FEATURES
Superectifier structure for high reliability condition
Cavity-free glass-passivated junction
Ultrafast reverse recovery time
Low forward voltage drop
Low leakage current
Low switching losses, high efficiency
High forward surge capability
Solder dip 275 °C max. 10 s, per JESD 22-B106
AEC-Q101 qualified
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer and telecommunication.
MECHANICAL DATA
Case:
GP20, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
3.0 A
V
RRM
50 V to 400 V
I
FSM
125 A
t
rr
50 ns
V
F
0.95 V, 1.25 V
T
J
max.
150 °C
GP20
SUPERECTIFIER
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
EGP30A
EGP30B
EGP30C
EGP30D
EGP30F
EGP30G
UNIT
Maximum repetitive peak reverse voltage
V
RRM
50
100
150
200
300
400
V
Maximum RMS voltage
V
RMS
35
70
105
140
210
280
V
Maximum DC blocking voltage
V
DC
50
100
150
200
300
400
V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
A
= 55 °C
I
F(AV)
3.0
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
I
FSM
125
A
Operating and storage temperature range
T
J
, T
STG
- 65 to + 150
°C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| EGP30DHE3/54 | 功能描述:整流器 200 Volt 3.0A 50ns Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| EGP30DHE3/73 | 功能描述:整流器 200 Volt 3.0A 50ns Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| EGP30DT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Ultrafast Recovery Rectifiers |
| EGP30D-TP | 功能描述:DIODE GPP 3A 200V HI EFF DO201AE RoHS:是 類別:分離式半導體產品 >> 單二極管/整流器 系列:- 標準包裝:100 系列:- 二極管類型:標準 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復 = 200mA（Io） 反向恢復時間(trr):300ns 電流 - 在 Vr 時反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座，接線柱安裝 封裝/外殼:DO-203AA，DO-4，接線柱 供應商設備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879 |
| EGP30DZ | 制造商:BILIN 制造商全稱:Galaxy Semi-Conductor Holdings Limited 功能描述:HIGH EFFICIENCY RECTIFIER |
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