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參數資料
型號: EH80159
廠商: TEMEX COMPONENTS
元件分類: 參考電壓二極管
英文描述: SILICON, PIN DIODE
封裝: DIE
文件頁數: 1/2頁
文件大小: 55K
代理商: EH80159
SILICON PIN DIODES
High voltage PIN diodes
12-18
Vol. 1
S A LES OFFIC ES : V IS IT OUR WEB S ITE AT
http://w w w.temex.com
Electrical characteristics
This series of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa
technology. A broad range of products is available, in terms of breakdown voltages, junction
capacitances and series resistances, to suit a large variety of applications, from 1 MHz to several GHz.
These diodes are available in non-magnetic packages.
S ILICON PIN DIODES FOR S WITCHING & PHA S E
S HIFTING A PPLICATIONS (MEDIUM & HIGH POWER)
PIN
Gold dia per side
min.
typ.
typ.
max
I
F
= 100 mA
I
F
= 200 mA
min.
EH80050
EH80051
EH80052
EH80053
EH80055
EH80080
EH80083
EH80086
EH80100
EH80102
EH80106
0.13
0.15
0.25
0.27
0.34
0.13
0.27
0.55
0.23
0.30
0.55
0.6
0.6
0.8
0.8
0.9
0.8
0.9
1.4
0.9
0.9
1.4
500
500
500
500
500
800
800
800
1000
1000
1000
550
550
550
550
550
850
850
850
1100
1100
1100
0.15
0.30
0.60
0.80
1.2
0.15
0.80
1.4
0.30
0.60
1.40
0.20
0.40
0.70
0.90
1.3
0.35
0.90
1.7
0.40
0.75
1.70
0.70
0.60
0.40
0.30
0.25
0.80
0.40
0.35
0.70
0.40
0.35
0.65
0.55
0.30
0.25
0.22
0.70
0.30
0.28
0.60
0.35
0.30
1.1
1.5
2.0
2.5
3.0
2.0
3.0
5.0
3.0
4.0
7.0
V
R
= 100V
I
F
= 200 mA
I
F
= 300 mA
EH80120
EH80124
EH80126
EH80129
EH80154
EH80159
0.25
0.65
0.75
1.25
0.65
1.25
0.9
1200
1200
1200
1200
1500
1500
1300
1300
1300
1300
1600
1600
0.30
1.00
1.40
2.00
1.00
2.00
0.40
1.20
1.70
2.30
1.20
2.30
0.60
0.45
0.40
0.30
0.45
0.30
0.55
0.35
0.30
0.25
0.35
0.25
6.0
10.0
12.0
15.0
10.0
15.0
1.5 H
(2)
1.7 H
(2)
2.2
1.5
2.2
V
R
= 200V
I
F
= 200 mA
I
F
= 300 mA
EH80182
EH80189
EH80204
EH80209
EH80210
0.75
1.4
0.85
1.4
1.5
1.5
1800
1800
2000
2000
2000
1900
1900
2100
2100
2100
0.60
2.00
1.00
2.00
3.00
0.80
2.40
1.30
2.40
3.40
0.60
0.35
0.50
0.35
0.20
0.50
0.30
0.40
0.30
0.15
12.0
18.0
14.0
18.0
25.0
2.6 H
(2)
1.7
2.6 H
(2)
3 H
(2)
Description
(1)
(2) Hexagonal chips (between opposite flats)
Other capacitance values available on request
Characteristics
at 25°C
Chip
Applicable
Break-
voltage
V
R
J unction
capacitance
Cj
Forward series
resistance
R
SF
Minority
carrier
lifetime
τ
I
dimensions
down
V
BR
(1)
Test conditions
N/A
I<10μA I<10μA
V
R
= 50 V
f = 1 MHz
pF
f=120 MHz
I
FAS SHOWN
MAX
I
F
=10mA
I
R
=6mA
μ
S
TYPE
mm typ.
V
V
CHIP AND PACKAGED DIODES
CHIP DIODES
相關PDF資料
PDF描述
EH99201-D2W-DF 184 CONTACT(S), FEMALE, STRAIGHT SINGLE PART CARD EDGE CONN, PRESS FIT
EH99201-D2W-DN 184 CONTACT(S), FEMALE, STRAIGHT SINGLE PART CARD EDGE CONN, PRESS FIT
EH99203-D2W-DF 184 CONTACT(S), FEMALE, STRAIGHT SINGLE PART CARD EDGE CONN, PRESS FIT
EH99203-D2W-DN 184 CONTACT(S), FEMALE, STRAIGHT SINGLE PART CARD EDGE CONN, PRESS FIT
EH99207-D2W-DF 184 CONTACT(S), FEMALE, STRAIGHT SINGLE PART CARD EDGE CONN, PRESS FIT
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