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參數(shù)資料
| 型號： | EMX4 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | High transition frequency (dual transistors) |
| 中文描述： | 高轉(zhuǎn)換頻率（雙晶體管） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 66K |
| 代理商： | EMX4 |
EMX4 / UMW6N / UMW10N / UMX4N /
Transistors
FMW6 / FMW10 / IMX4
High transition frequency (dual transistors)
EMX4 / UMW6N / UMW10N / UMX4N /
FMW6 / FMW10 / IMX4
!
Features
1) Two 2SC3837K chips in a EMT or UMT or SMT package.
2) High transition frequency. (f
T
=1.5GHz)
3) Low output capacitance. (Cob=0.95pF)
!
Equivalent circuit
UMW6N
(3)
(2)
(1)
(4)
(5)
FMW6
(3)
(4)
(5)
(2)
(1)
(3)
(2)
(1)
(4)
(5)
UMW10
(3)
(4)
(5)
(2)
(1)
FMW10
EMX4 / UMX4N
(3)
(2)
(1)
(4)
(5)
(6)
IMX4
(4)
(5)
(6)
(3)
(2)
(1)
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
30
18
3
50
300(TOTAL)
150
55
~
+
150
150(TOTAL)
EMX4 / UMW6N / UMW10N / UMX4N
FMW6 / FMW10 / IMX4
Unit
V
V
V
mA
mW
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
1
2
!
Electrical characteristics
(Ta = 25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
Min.
30
18
3
27
0.5
600
Typ.
1
1500
0.95
Max.
0.5
0.5
270
0.5
2
Unit
V
V
V
μ
A
μ
A
V
Conditions
Transition frequency
Output capacitance
V
CE(sat)
h
FE1 /
h
FE2
f
T
Cob
1.6
MHz
pF
I
C
=
10
μ
A
I
C
=
1mA
I
E
=
10
μ
A
V
CB
=
10V
V
EB
=
2V
V
CE
/I
C
=
10V/10mA
V
CE
/I
C
=
10V/10mA
V
CE
/I
C
=
10V/10mA, f
=
200MHz
V
CB
/f
=
10V/1MHz, I
E
=
0A
I
C
/I
B
=
20mA/4mA
Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
h
FE
pairing
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EMX4_1 | 制造商:ROHM 制造商全稱:Rohm 功能描述:High transition frequency (dual transistors) |
| EMX4T2R | 功能描述:兩極晶體管 - BJT DUAL NPN 30V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| EMX5 | 制造商:ROHM 制造商全稱:Rohm 功能描述:High transition frequency (dual transistors) |
| EMX5_1 | 制造商:ROHM 制造商全稱:Rohm 功能描述:High transition frequency (dual transistors) |
| EMX5_10 | 制造商:ROHM 制造商全稱:Rohm 功能描述:High transition frequency (dual transistors) |
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