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參數資料
| 型號： | EMZ7 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | General purpose transistor(dual transistors) |
| 中文描述： | 通用晶體管（雙晶體管） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 82K |
| 代理商： | EMZ7 |
EMZ7 / UMZ7N
Transistors
General purpose transistor
(dual transistors)
EMZ7 / UMZ7N
!
Features
1) Both a 2SA2018 chip and 2SC5585 chip in a EMT or
UMT package.
2) Mounting possible with EMT3 or UMT3 automatic
mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
5) Low V
CE(sat)
!
Structure
NPN / PNP epitaxial planar silicon transistor
!
Equivalent Circuit
Tr
2
Tr
1
(3)
EMZ7 / UMZ7N
(2)
(1)
(4)
(5)
(6)
!
External dimensions
(Units : mm)
Abbreviated symbol
: Z7
Each lead has same dimensions
0
(
2
1
0
0
0
0.1Min.
2.1
0
0
1.25
(
0
(
(
(
(
UMZ7N
ROHM : UMT6
Abbreviated symbol
: Z7
Each lead has same dimensions
0
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0
0
0
0
1
1
EMZ7
ROHM : EMT6
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Symbol
Limits
Unit
Tr
1
Tr
2
V
CBO
15
15
V
V
CEO
12
12
V
V
EBO
6
6
V
I
C
500
500
mA
mW
1
Tj
150
°
C
Tstg
55
～+
150
°
C
P
C
150(TOTAL)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
Collector power dissipation
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| EN27LV020-120 | 2Megabit Low Voltage EPROM (256K x 8) |
| EN27LV020-150 | 2Megabit Low Voltage EPROM (256K x 8) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| EMZ7_08 | 制造商:ROHM 制造商全稱:Rohm 功能描述:General purpose transistor (dual transistors) |
| EMZ7_1 | 制造商:ROHM 制造商全稱:Rohm 功能描述:General purpose transistor (dual transistors) |
| EMZ7T2R | 功能描述:兩極晶體管 - BJT NPN/PNP 12V 500MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| EMZ8 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Power management (dual transistors) |
| EMZ8_1 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Power management (dual transistors) |
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