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參數資料
| 型號： | EN29F002B |
| 英文描述： | 5V, Half Duplex, 5Mbps, RS-485/RS-422 Transceiver; Temperature Range: -40°C to 85°C; Package: 8-PDIP |
| 中文描述： | 2兆位（262144 × 8）閃光 |
| 文件頁數： | 1/32頁 |
| 文件大小： | 267K |
| 代理商： | EN29F002B |
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Tel: 408-235-8680
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Fax: 408-235-8685
1
EN29F002 / EN29F002N
Rev. C, Issue Date: 2001/07/05
FEATURES
5.0V ± 10% for both read/write operation
Read Access Time
- 45ns, 55ns, 70ns, and 90ns
Fast Read Access Time
- 70ns with Cload = 100pF
- 45ns, 55ns with Cload = 30pF
Sector Architecture:
One 16K byte Boot Sector, Two 8K byte
Parameter Sectors, one 32K byte and
three 64K byte main Sectors
Boot Block Top/Bottom Programming
Architecture
High performance program/erase speed
- Byte program time: 10s typical
- Sector erase time: 500ms typical
- Chip erase time: 3.5s typical
Low Standby Current
- 1A CMOS standby current-typical
- 1mA TTL standby current
Low Power Active Current
- 30mA active read current
- 30mA program / erase current
JEDEC Standard program and erase
commands
JEDEC standard DATA polling and toggle
bits feature
Hardware RESET Pin (n/a for EN29F002N)
Single Sector and Chip Erase
Sector Protection / Temporary Sector
Unprotect (RESET = VID)
Sector Unprotect Mode
Embedded Erase and Program Algorithms
Erase Suspend / Resume modes:
Read and program another sector during
Erase Suspend Mode
0.4 m double-metal double-poly
triple-well CMOS Flash Technology
Low Vcc write inhibit < 3.2V
100K endurance cycle
Package Options
- 32-pin PDIP
- 32-pin PLCC
- 32-pin TSOP (Type 1)
Commercial and Industrial Temperature
Ranges
GENERAL DESCRIPTION
The EN29F002 / EN29F002N is a 2-Megabit, electrically erasable, read/write non-volatile flash memory.
Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with
top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byte Parameter sectors, and four main
sectors (one 32K Byte and three 64K Byte). Any byte can be programmed typically at 10s. The EN29F002 /
EN29F002N features 5.0V voltage read and write operation. The access times are as fast as 45ns to eliminate
the need for WAIT states in high-performance microprocessor systems.
The EN29F002 / EN29F002N has separate Output Enable ( OE ), Chip Enable ( CE ), and Write
Enable ( WE ) controls which eliminate bus contention issues.
This device is designed to allow
either single sector or full chip erase operation, where each sector can be individually protected
against program/erase operations or temporarily unprotected to erase or program. The device can
sustain
a
minimum
of
100K
program/erase
cycles
on
each
sector.
EN29F002 / EN29F002N
2 Megabit (256K x 8-bit) Flash Memory
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相關代理商/技術參數 |
參數描述 |
|---|---|
| EN29F002B-45J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2 Megabit (256K x 8-bit) Flash Memory |
| EN29F002B-45JI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2 Megabit (256K x 8-bit) Flash Memory |
| EN29F002B-45P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2 Megabit (256K x 8-bit) Flash Memory |
| EN29F002B-45PI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2 Megabit (256K x 8-bit) Flash Memory |
| EN29F002B-45T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2 Megabit (256K x 8-bit) Flash Memory |
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