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參數(shù)資料
| 型號： | EN29LV040A |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 4 Megabit (512K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory |
| 中文描述： | 4兆位（為512k × 8位）統(tǒng)一部門，3.0伏的CMOS只閃存 |
| 文件頁數(shù)： | 1/35頁 |
| 文件大?。?/td> | 257K |
| 代理商： | EN29LV040A |
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FEATURES
This Data Sheet may be revised by subsequent versions 2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. A, Issue Date: 2005/08/16
EN29LV040A
Fully compatible with EN29LV040
Single power supply operation
- Full voltage range: 2.7-3.6 volt read and write
operations for battery-powered applications.
- Regulated voltage range: 3.0-3.6 volt read
and write operations for high performance
3.3 volt microprocessors.
High performance
- Access times as fast as 45 ns
Low power consumption (typical values at 5
MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1
μ
A typical standby current (standard access
time to active mode)
Flexible Sector Architecture:
- Eight 64 Kbyte sectors
- Supports full chip erase
- Individual sector erase supported
- Sector protection and unprotection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
GENERAL DESCRIPTION
High performance program/erase speed
- Byte/Word program time: 8μs typical
- Sector erase time: 500ms typical
JEDEC Standard program and erase
commands
JEDEC standard
DATA
polling and toggle
bits feature
Single Sector and Chip Erase
Embedded Erase and Program Algorithms
Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
triple-metal double-poly triple-well CMOS
Flash Technology
Low Vcc write inhibit < 2.5V
minimum 100K program/erase endurance
cycle
Package options
- 8mm x 20mm 32-pin TSOP (Type 1)
- 8mm x 14mm 32-pin TSOP (Type 1)
- 32-pin PLCC
Commercial and industrial Temperature
Range
The EN29LV040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 524,288 bytes. Any byte can be programmed typically in 8μs. The EN29LV040A
features 3.0V voltage read and write operation, with access times as fast as 45ns to eliminate the
need for WAIT states in high-performance microprocessor systems.
The EN29LV040A has separate Output Enable (
OE
), Chip Enable (
CE
), and Write Enable (WE)
controls, which eliminate bus contention issues. This device is designed to allow either single
Sector or full chip erase operation, where each Sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain a
minimum of 100K program/erase cycles on each Sector.
EN29LV040A
4 Megabit (512K x 8-bit ) Uniform Sector,
CMOS 3.0 Volt-only Flash Memory
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| EN29LV160AB-70TCP | 制造商:EON-CFEON 功能描述: |
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