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參數資料
| 型號： | EPB018A9-70 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Super Low Noise High Gain Heterojunction FET |
| 中文描述： | 超低噪聲高增益異質結場效應管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 69K |
| 代理商： | EPB018A9-70 |
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Excelics
EPB018A5/A7/A9-70
DATA SHEET
Super Low Noise High Gain Heterojunction FET
NON-HERMETIC LOW COST CERAMIC 70 mil PACKAGE
TYPICAL 0.50~0.90dB NOISE FIGURE AND 11.5~13.0dB
ASSOCIATED GAIN AT 12GHz
0.3 X 180 MICRON RECESSED “ MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION PROFILE
PROVIDES SUPER LOW NOISE, HIGH GAIN AND HIGH
RELIABILITY
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
11.5
11.0
10.5
TYP
0.50
0.65
0.95
13.0
12.5
11.5
15.0
15.0
14.0
11.5
MAX
0.60
0.80
1.20
UNIT
EPB018A5-70
EPB018A7-70
EPB018A9-70
EPB018A5-70
EPB018A7-70
EPB018A9-70
f=12GHz
f=18GHz
f=12GHz
f=18GHz
NF
Noise Figure, f=12GHz
Vds=2V, Ids=15mA
dB
Ga
Associated Gain, f=12GHz
Vds=2V, Ids=15mA
Output Power at 1dB Compression
Vds=3V, Ids=25mA
Gain at 1dB Compression
Vds=3V, Ids=25mA
dB
P
1dB
dBm
G
1dB
dB
Idss
Saturated Drain Current Vds=2V, Vgs=0V
15
45
80
mA
Gm
Transconductance
Vds=2V, Vgs=0V
50
90
mS
Vp
Pinch-off Voltage
Vds=2V, Ids=1.0mA
-0.8
-2.5
V
BVgd
Drain Breakdown Voltage Igd=10uA
-3
-6
V
BVgs
Source Breakdown Voltage Igs=10uA
-3
-6
V
Rth
Thermal Resistance
480
*
o
C/W
*
Overall Rth depands on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Ids
Drain Current
Igsf
Forward Gate Current
Pin
Input Power
Tch
Channel Temperature
Tstg
Storage Temperature
Pt
Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site:
www.excelics.com
ABSOLUTE
1
5V
-3V
Idss
2mA
12dBm
175
o
C
-65/175
o
C
285mW
CONTINUOUS
2
4V
-2V
60mA
0.3mA
@1dB Compression
150
o
C
-65/150
o
C
240mW
All Dimensions In mils.
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