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參數資料
| 型號： | ER1Y |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1 A, 1600 V, SILICON, SIGNAL DIODE, DO-215AA |
| 封裝： | SMBG, 2 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 119K |
| 代理商： | ER1Y |
G
H
J
E
F
A
B
D
C
Cathode Band
21201 Itasca St.
Chatsworth, CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
ER1Q
Thru
ER1ZZ
1 Amp Superfast
Recovery
Silicon Rectifier
1200 to 2000 Volts
DO-215AA
(SMBG)
DIMENSIONS
INCHES
MIN
.075
.081
.004
---
.015
.065
.235
.160
.130
MM
DIM
A
B
C
D
E
F
G
H
J
MAX
.095
.087
.008
.02
.03
.084
.255
.180
.155
MIN
1.90
2.06
.10
---
.38
1.65
5.97
4.06
3.30
MAX
2.42
2.21
.20
.51
.76
2.13
6.48
4.57
3.94
NOTE
Features
For Surface Mount Applications
Extremely Low Thermal Resistance
High Temp Soldering: 250
°
C for 10 Seconds At Terminals
Superast Recovery Times For High Efficiency
Gull Wing Lead Bend To Prevent Arcing
Perfect For Ballast, Television And Monitor Applications
Maximum Ratings
Operating Temperature: -50
°
C to +150
°
C
Storage Temperature: -50
°
C to +150
°
C
Maximum Thermal Resistance; 15
°
C/W Junction To Lead
Microsemi
Part
Number
Marking
Peak Reverse
Voltage
ER1Q
ER1Q
1200V
ER1V
ER1V
1400V
ER1Y
ER1Y
1600V
ER1Z
ER1Z
1800V
ER1ZZ
ER1ZZ
2000V
lectrical Characteristics @ 25
°
C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
ER1Q-ER1Y
ER1Z-ER1ZZ
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Maximum Reverse
Recovery Time
ER1Q-ER1Y
ER1Z-ER1ZZ
Typical Junction
Capacitance
*Pulse test: Pulse width 200
μ
sec, Duty cycle 2%
Device
Maximum
Recurrent
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
1200V
1400V
1600V
1800V
2000V
840V
980V
1120V
1260V
1400V
I
F(AV)
1.0A
T
J
= 55
°
C
I
FSM
30A
8.3ms, half sine
V
F
1.35V
1.50V
I
FM
= 1.0A;
T
J
= 25
°
C*
I
R
5
μ
A
30
μ
A
T
J
= 25
°
C
T
J
= 125
°
C
T
rr
100ns
150ns
45pF
I
F
=0.5A, I
R
=1.0A,
I
rr
=0.25A
Measured at
1.0MHz, V
R
=4.0V
C
J
0.075”
0.170
0.095
SUGGESTED SOLDER
PAD LAYOUT
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