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參數(shù)資料
| 型號： | ES1PB |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | High Current Density Surface Mount Ultrafast Rectifiers |
| 中文描述： | 高電流密度表面貼裝超快速整流器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 153K |
| 代理商： | ES1PB |
Dimensions in inches
and (millimeters)
0.000 (0.00)
0.012 (0.30)
0.013 (0.35)
0.004 (0.10)
0.018 (0.45)
0.006 (0.15)
0.045 (1.15)
0.033 (0.85)
0.036 (0.91)
0.024 (0.61)
0.016 (0.40)
0.032 (0.80)
0.053 (1.35)
0.041 (1.05)
0.012 (0.30) REF
0.105
(2.67)
0.025
(0.635)
0.100
(2.54)
0.030
(0.762)
0.050
(1.27)
Cathode band
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
0.086 (2.18)
0.074 (1.88)
0.087 (2.20)
0.103 (2.60)
Case Style SMP
Maximum Ratings & Thermal Characteristics
(T
A
= 25°C unless otherwise noted.)
Parameter
Device marking code
Maximum reverse voltage
Maximum average forward rectified current see Fig.1
Peak forward surge current 10ms single half sine-wave
superimposed on rated load
Symbol
ES1PA
EA
50
ES1PB
EB
100
ES1PC
EC
150
ES1PD
ED
200
Unit
V
RM
I
F(AV)
I
FSM
V
A
1.0
30
A
Typical thermal resistance
(1)
R
θ
JA
R
θ
JL
R
θ
JC
T
J
, T
STG
105
15
20
°C/W
Operating junction and Storage temperature range
–55 to +150
°C
Electrical Characteristics
(T
A
= 25°C unless otherwise noted.)
Parameter
Maximum instantaneous forward voltage
(2)
at I
F
=0.6A, T
J
=25°C
Symbol
Value
0.865
0.920
5.0
500
15
25
30
8
10
10
Unit
V
F
V
at I
F
=1A, T
J
=25°C
Maximum reverse current T
J
= 25°C
at rated VRM
(2)
Maximum reverse recovery time at I
F
=0.5A, I
R
=1A, I
rr
=0.25A
Typical reverse recovery time at T
J
=25°C
at I
F
= 1.0A, V
R
= 30V dv/dt = 50A/μs, I
rr
= 10% IRM T
J
=100°C
Typical reverse recovery time at T
J
=25°C
at I
F
= 1.0A, V
R
= 30V dv/dt = 50A/μs, I
rr
= 10% IRM T
J
=100°C
Typical junction capacitance at 4.0V, 1MHz
Notes
: (1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0mm copper pad areas. R
θ
JL
is measured at the ter-
minal of cathode band. R
θ
JC
is measured at the top centre of the body
(2) Pulse test: 300μs pulse width, 1% duty cycle
μA
T
J
=125°C
I
R
trr
ns
trr
ns
Qrr
nC
C
J
pF
Features
Very low profile - typical height of 1.0mm
For surface mount application
Glass passivated chip junction
Ultrafast recovery times for high efficiency
Low forward voltage, low power loss
Built in strain relief, ideal for automated placement
High temperature soldering:
260°C maximum/10 seconds at terminals
Meets MSL level 1 per J-STD-020C
Mechanical Data
Case:
SMP
Terminals:
Matte Tin plated (E3 Suffix) leads, solderable
per J-STD-002B and MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Weight:
0.0009 oz., 0.024 g
Epoxy meets UL 94V-0 flammability rating
Mounting Pad Layout
ES1PA thru ES1PD
Vishay Semiconductors
formerly General Semiconductor
High Current Density Surface Mount Ultrafast Rectifiers
Reverse Voltage
50 to 200 V
Forward Current
1.0 A
Reverse Recovery Time
15 ns
Document Number 88918
23-Sep-04
www.vishay.com
1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ES1PB_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Current Density Surface Mount Ultrafast Rectifiers |
| ES1PB-E3/84 | 制造商:Vishay Angstrohm 功能描述:Diode Switching 100V 1A 2-Pin SMP T/R 制造商:Vishay Semiconductors 功能描述:ULTRA FAST RECOVERY RECTFR 100V 1A 2PIN SMP - Tape and Reel |
| ES1PB-E3/84A | 功能描述:整流器 1.0 Amp 100 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| ES1PB-E3/85A | 功能描述:整流器 1.0 Amp 100 Volt 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| ES1PBHE3/84A | 功能描述:整流器 1.0 Amp 100 Volt 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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