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參數資料
| 型號： | ESH1PB |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Vishay General Semiconductor |
| 中文描述： | 威世通用半導體 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 101K |
| 代理商： | ESH1PB |
Vishay General Semiconductor
ESH1PB, ESH1PC & ESH1PD
Document Number: 88895
Revision: 25-Jun-07
www.vishay.com
1
New Product
High Current Density Surface Mount Ultrafast Rectifiers
FEATURES
Very low profile - typical height of 1.0 mm
Ideal for automated placement
Glass passivated chip junction
Ultrafast recovery times for high frequency
Low forward voltage drop, low power loss
Low thermal resistance
Meets MSL level 1 per J-STD-020C, LF max peak
of 260 °C
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in secondary rectification and freewheeling for
ultrafast switching speeds of ac-to-ac and dc-to-dc
converters in high temperature conditions for both
consumer and automotive applications.
MECHANICAL DATA
Case:
DO-220AA (SMP)
Epoxy meets UL-94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
DO-220AA (SMP)
eSMP
TM
Series
MAJOR RATINGS AND CHARACTERISTICS
I
F(AV)
V
RRM
t
rr
V
F
T
j
max.
1 A
100 V, 150 V, 200 V
25 ns
0.90 V
175 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
ESH1PB
ESH1PC
ESH1PD
UNIT
Device marking code
PB
PC
PD
Maximum repetitive peak reverse voltage
V
RRM
I
F(AV)
100
150
200
V
Maximum average forward rectified current (Fig. 1)
1.0
A
Peak forward surge current 10 ms single half sine-
wave superimposed on rated load
I
FSM
50
A
Operating junction and storage temperature range
T
J
, T
STG
- 55 to + 175
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Maximum instantaneous forward
voltage
(1)
at I
F
= 0.7 A, T
j
= 25 °C
at I
F
= 1 A, T
j
= 25 °C
V
F
0.86
0.90
V
Maximum reverse current at rated
V
R (1)
voltage
Maximum reverse current
T
j
= 25 °C
T
j
= 125 °C
at V
R
= 20 V, T
j
= 150 °C
I
R
1.0
25
μA
I
R
50
μA
相關PDF資料 |
PDF描述 |
|---|---|
| ESH1PB-E384A | Vishay General Semiconductor |
| ESH1PB-E385A | Vishay General Semiconductor |
| ESH1PBHE384A | Vishay General Semiconductor |
| ESH1PBHE385A | Vishay General Semiconductor |
| ESH1PC | Vishay General Semiconductor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| ESH1PB_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Current Density Surface Mount Ultrafast Rectifiers |
| ESH1PB-E3/84A | 功能描述:整流器 1.0 Amp 100V 25ns RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| ESH1PB-E3/85A | 功能描述:整流器 100 Volt 1.0A 25ns Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| ESH1PB-E384A | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Vishay General Semiconductor |
| ESH1PB-E385A | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Vishay General Semiconductor |
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