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參數資料
| 型號： | F2246 |
| 廠商： | Polyfet RF Devices |
| 英文描述： | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| 中文描述： | 專利金金屬化硅柵增強型射頻功率VDMOS晶體管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 33K |
| 代理商： | F2246 |
RF CHARACTERISTICS ( WATTS OUTPUT )
2
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER
VDMOS TRANSISTOR
2Watts Single Ended
Package Style AC
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
20Watts
10
C
o
200
-65
to 150
0.8 A
30V
V
V
50
50
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Gps
η
VSWR
Common Source Power Gai
Drain Efficiency
Load Mismatch Toleranc
dB
%
Relative
10
50
0.2
20:1
Idq =
Idq =
Idq =
0.2
0.2
A,
A,
A,
12.5
Vds =
V,
12.5
Vds =
V,
12.5
Vds =
V,
F = 850 MHz
F = 850 MHz
F = 850 MHz
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdown Voltag
Zero Bias Drain Curren
Gate Leakage Curren
Gate Bias for Drain Curren
Forward Transconductanc
Saturation Resistanc
Saturation Curren
Common Source Input Capacitanc
Common Source Feedback Capacitanc
Common Source Output Capacitanc
40
0.2
1
7
1
0.2
2
2.3
7.5
1.2
8
Mho
Ohm
Amp
pF
V
V
pF
pF
mA
uA
0.01
Ids =
A,
Vgs = 0V
12.5
Vds =
V,
Vgs = 0V
Vds = 0 V,
Vgs = 30V
0.02
Ids =
A,
Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids =1.6
Vgs = 20V, Vds = 10V
12.5
Vds =
V, Vgs = 0V, F = 1 MHz
A
12.5
Vds =
V, Vgs = 0V, F = 1 MHz
12.5
Vds =
V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION
C
o
C
o
C/W
o
F2246
polyfet rf devices
8/1/97
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PDF描述 |
|---|---|
| F2247 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F2248 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F30D05 | POWER RECTIFIERS(30A,50-200V) |
| F30D10 | POWER RECTIFIERS(30A,50-200V) |
| F30D15 | POWER RECTIFIERS(30A,50-200V) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| F2247 | 制造商:POLYFET 制造商全稱:Polyfet RF Devices 功能描述:PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F2248 | 制造商:POLYFET 制造商全稱:Polyfet RF Devices 功能描述:PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F224X | 功能描述:電源變壓器 115VAC 12.6V 3.0A PRI 115VAC RoHS:否 制造商:Triad Magnetics 功率額定值:12 VA 初級電壓額定值:115 V / 230 V 次級電壓額定值:12 V / 24 V 安裝風格:SMD/SMT 一次繞組:Dual Primary Winding 二次繞組:Dual Secondary Winding 長度:2.5 in 寬度:2 in 高度:1.062 in |
| F-224X | 制造商:Triad Magnetics 功能描述: |
| F2250NLGK | 功能描述:RF Attenuator 35dB 50MHz ~ 6GHz 50 Ohm 16-TFQFN Exposed Pad 制造商:idt, integrated device technology inc 系列:- 零件狀態:有效 衰減值:35dB 容差:- 頻率范圍:50MHz ~ 6GHz 功率（W）:- 阻抗:50 歐姆 封裝/外殼:16-TFQFN 裸露焊盤 標準包裝:624 |
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