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參數(shù)資料
| 型號： | F29C51004T12J |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
| 中文描述： | 該F29C51004T/F29C51004B是一款高速524288 × 8位CMOS閃存 |
| 文件頁數(shù)： | 4/16頁 |
| 文件大?。?/td> | 100K |
| 代理商： | F29C51004T12J |
4
F29C51004T/F29C51004B
V1.0
November 1998
SyncMOS
F29C51004T/F29C51004B
Absolute Maximum Ratings
(1)
NOTE:
1.
Stress greater than those listed unders “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
No more than one output maybe shorted at a time and not exceeding one second long.
2.
DC Electrical Characteristics
(over the commercial operating range)
Symbol
Parameter
Commercial
Industrial
Unit
V
IN
Input Voltage (input or I/O pins)
-2 to +7
-2 to +7
V
V
IN
Input Voltage (A
9
pin, OE)
-2 to +13
-2 to +13
V
V
CC
Power Supply Voltage
-0.5 to +5.5
-0.5 to +5.5
V
T
STG
Storage Temerpature (Plastic)
-65 to +125
-65 to +150
°
C
T
OPR
Operating Temperature
0 to +70
-40 to + 85
°
C
I
OUT
Short Circuit Current
(2)
200 (Max.)
200 (Max.)
mA
Parameter
Name
Parameter
Test Conditions
Min.
Max.
Unit
V
IL
Input LOW Voltage
V
CC
= V
CC
Min.
—
0.8
V
V
IH
Input HIGH Voltage
V
CC
= V
CC
Max.
2
—
V
I
IL
Input Leakage Current
V
IN
= GND to V
CC
, V
CC
= V
CC
Max.
—
±
1
μ
A
I
OL
Output Leakage Current
V
OUT
= GND to V
CC
, V
CC
= V
CC
Max.
—
±
10
μ
A
V
OL
Output LOW Voltage
V
CC
= V
CC
Min., I
OL
= 2.1mA
—
0.4
V
V
OH
Output HIGH Voltage
V
CC
= V
CC
Min, I
OH
= -400
μ
A
2.4
—
V
I
CC1
Read Current
CE = OE = V
Address input = V
V
CC
= V
CC
IL
, WE = V
IH
, at f = 1/t
, all I/Os open,
IL
/V
IH
RC
Min.,
Max.
—
30
mA
I
CC2
Write Current
CE = WE = VIL, OE = V
IH
, V
CC
= V
CC
Max.
—
40
mA
I
SB
TTL Standby Current
CE = OE = WE = V
IH
, V
CC
= V
CC
Max.
—
1
mA
I
SB1
CMOS Standby Current
CE = OE = WE = V
CC
– 0.3V, V
CC
= V
CC
Max.
—
50
μ
A
V
H
Device ID Voltage for A
9
CE = OE = V
IL
, WE = V
IH
11.5
12.5
V
I
H
Device ID Current for A
9
CE = OE = V
IL
, WE = V
IH
, A9 = V
H
Max.
—
50
μ
A
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| F29C51004T12JI | The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
| F29C51004T90PI | The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| F29C51004T12JI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
| F29C51004T12P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
| F29C51004T12PI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
| F29C51004T12T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
| F29C51004T12TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
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