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參數資料
型號: F29C51004T12PI
廠商: Electronic Theatre Controls, Inc.
英文描述: The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
中文描述: 該F29C51004T/F29C51004B是一款高速524288 × 8位CMOS閃存
文件頁數: 4/16頁
文件大小: 100K
代理商: F29C51004T12PI
4
F29C51004T/F29C51004B
V1.0
November 1998
SyncMOS
F29C51004T/F29C51004B
Absolute Maximum Ratings
(1)
NOTE:
1.
Stress greater than those listed unders “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
No more than one output maybe shorted at a time and not exceeding one second long.
2.
DC Electrical Characteristics
(over the commercial operating range)
Symbol
Parameter
Commercial
Industrial
Unit
V
IN
Input Voltage (input or I/O pins)
-2 to +7
-2 to +7
V
V
IN
Input Voltage (A
9
pin, OE)
-2 to +13
-2 to +13
V
V
CC
Power Supply Voltage
-0.5 to +5.5
-0.5 to +5.5
V
T
STG
Storage Temerpature (Plastic)
-65 to +125
-65 to +150
°
C
T
OPR
Operating Temperature
0 to +70
-40 to + 85
°
C
I
OUT
Short Circuit Current
(2)
200 (Max.)
200 (Max.)
mA
Parameter
Name
Parameter
Test Conditions
Min.
Max.
Unit
V
IL
Input LOW Voltage
V
CC
= V
CC
Min.
0.8
V
V
IH
Input HIGH Voltage
V
CC
= V
CC
Max.
2
V
I
IL
Input Leakage Current
V
IN
= GND to V
CC
, V
CC
= V
CC
Max.
±
1
μ
A
I
OL
Output Leakage Current
V
OUT
= GND to V
CC
, V
CC
= V
CC
Max.
±
10
μ
A
V
OL
Output LOW Voltage
V
CC
= V
CC
Min., I
OL
= 2.1mA
0.4
V
V
OH
Output HIGH Voltage
V
CC
= V
CC
Min, I
OH
= -400
μ
A
2.4
V
I
CC1
Read Current
CE = OE = V
Address input = V
V
CC
= V
CC
IL
, WE = V
IH
, at f = 1/t
, all I/Os open,
IL
/V
IH
RC
Min.,
Max.
30
mA
I
CC2
Write Current
CE = WE = VIL, OE = V
IH
, V
CC
= V
CC
Max.
40
mA
I
SB
TTL Standby Current
CE = OE = WE = V
IH
, V
CC
= V
CC
Max.
1
mA
I
SB1
CMOS Standby Current
CE = OE = WE = V
CC
– 0.3V, V
CC
= V
CC
Max.
50
μ
A
V
H
Device ID Voltage for A
9
CE = OE = V
IL
, WE = V
IH
11.5
12.5
V
I
H
Device ID Current for A
9
CE = OE = V
IL
, WE = V
IH
, A9 = V
H
Max.
50
μ
A
相關PDF資料
PDF描述
F29C51004T12T The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T12TI The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004 The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T70J The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T70JI The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
相關代理商/技術參數
參數描述
F29C51004T12T 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T12TI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T70J 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T70JI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T70P 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
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