欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: F29C51004T70J
廠商: Electronic Theatre Controls, Inc.
英文描述: The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
中文描述: 該F29C51004T/F29C51004B是一款高速524288 × 8位CMOS閃存
文件頁數: 9/16頁
文件大小: 100K
代理商: F29C51004T70J
9
F29C51004T/F29C51004B
V1.0
November 1998
SyncMOS
F29C51004T/F29C51004B
Functional Description
The F29C51004T/F29C51004B consists of 512
equally-sized sectors of 1K bytes each. The 16 KB
lockable Boot Block is intended for storage of the
system BIOS boot code. The boot code is the first
piece of code executed each time the system is
powered on or rebooted.
The F29C51004 is available in two versions: the
F29C51004T with the Boot Block address starting
from 7C000H to 7FFFFH, and the F29C51004B
with the Boot Block address starting from 00000H
to 3FFFFH.
Read Cycle
A read cycle is performed by holding both CE
and OE signals LOW. Data Out becomes valid only
when these conditions are met. During a read cycle
WE must be HIGH prior to CE and OE going LOW.
WE must remain HIGH during the read operation
for the read to complete (see Table 1).
Output Disable
Returning OE or CE HIGH, whichever occurs first
will terminate the read operation and place the l/O
pins in the HIGH-Z state.
Standby
The device will enter standby mode when the CE
signal is HIGH. The l/O pins are placed in the
HIGH-Z, independent of the OE input state.
Byte Write Cycle
The F29C51004T/F29C51004B is programmed
on a byte-by-byte basis. The byte write operation is
initiated by using a specific four-bus-cycle
sequence: two unlock program cycles, a program
setup command and program data program cycles
(see Table 2).
During the byte write cycle, addresses are
latched on the falling edge of either CE or WE,
whichever is last. Data is latched on the rising edge
of CE or WE, whichever is first. The byte write cycle
can be CE controlled or WE controlled.
Sector Erase Cycle
The F29C51004T/F29C51004B features a
sector erase operation which allows each sector to
be erased and reprogrammed without affecting
data stored in other sectors. Sector erase operation
is initiated by using a specific six-bus-cycle
sequence: Two unlock program cycles, a setup
command, two additional unlock program cycles,
and the sector erase command (see Table 2). A
sector must be first erased before it can be re-
written. While in the internal erase mode, the
device ignores any program attempt into the
device. The internal erase completion can be
determined via DATA polling or toggle bit status.
The F29C51004T/F29C51004B is shipped fully
erased (all bits = 1).
16KB Boot Block
1 KB
1 KB
1 KB
1 KB
1 KB
1 KB
16KB Boot Block
F
29C51004T
F
29C51004B
7FFFFH
7C000H
00000H
03FFFH
51004-15
00000H
16KB Boot Block = 32 Sectors
Table 1. Operation Modes Decoding
NOTES:
1.
2.
X = Don’t Care, V
IH
= HIGH, V
IL
= LOW, V
H
= 12.5V Max.
PD: The data at the byte address to be programmed.
Decoding Mode
Read
Byte Write
Standby
Autoselect Device ID
Autoselect Manufacture ID
Enabling Boot Block Protection Lock
Disabling Boot Block Protection Lock
Output Disable
CE
V
IL
V
IL
V
IH
V
IL
V
IL
V
IL
V
H
V
IL
OE
V
IL
V
IH
X
V
IL
V
IL
V
H
V
H
V
IH
WE
V
IH
V
IL
X
V
IH
V
IH
V
IL
V
IL
V
IH
A
0
A
0
A
0
X
V
IH
V
IL
X
X
X
A
1
A
1
A
1
X
V
IL
V
IL
X
X
X
A
9
A
9
A
9
X
V
H
V
H
V
H
V
H
X
I/O
READ
PD
HIGH-Z
CODE
CODE
X
X
HIGH-Z
相關PDF資料
PDF描述
F29C51004T70JI The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T70P The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T70PI The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T70T The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T70TI The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
相關代理商/技術參數
參數描述
F29C51004T70JI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T70P 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T70PI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T70T 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T70TI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
主站蜘蛛池模板: 永寿县| 镇江市| 错那县| 英山县| 郎溪县| 古浪县| 阳泉市| 临猗县| 商南县| 清苑县| 江西省| 府谷县| 垦利县| 呼伦贝尔市| 库伦旗| 宿州市| 绵阳市| 文昌市| 青浦区| 伊吾县| 新乐市| 三河市| 行唐县| 达拉特旗| 永安市| 宁晋县| 武汉市| 淳安县| 固安县| 象山县| 项城市| 永善县| 海晏县| 山西省| 鄂尔多斯市| 南岸区| 元江| 新平| 金山区| 岳池县| 湄潭县|