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參數資料
| 型號： | F29C51004T70PI |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
| 中文描述： | 該F29C51004T/F29C51004B是一款高速524288 × 8位CMOS閃存 |
| 文件頁數： | 9/16頁 |
| 文件大小： | 100K |
| 代理商： | F29C51004T70PI |
9
F29C51004T/F29C51004B
V1.0
November 1998
SyncMOS
F29C51004T/F29C51004B
Functional Description
The F29C51004T/F29C51004B consists of 512
equally-sized sectors of 1K bytes each. The 16 KB
lockable Boot Block is intended for storage of the
system BIOS boot code. The boot code is the first
piece of code executed each time the system is
powered on or rebooted.
The F29C51004 is available in two versions: the
F29C51004T with the Boot Block address starting
from 7C000H to 7FFFFH, and the F29C51004B
with the Boot Block address starting from 00000H
to 3FFFFH.
Read Cycle
A read cycle is performed by holding both CE
and OE signals LOW. Data Out becomes valid only
when these conditions are met. During a read cycle
WE must be HIGH prior to CE and OE going LOW.
WE must remain HIGH during the read operation
for the read to complete (see Table 1).
Output Disable
Returning OE or CE HIGH, whichever occurs first
will terminate the read operation and place the l/O
pins in the HIGH-Z state.
Standby
The device will enter standby mode when the CE
signal is HIGH. The l/O pins are placed in the
HIGH-Z, independent of the OE input state.
Byte Write Cycle
The F29C51004T/F29C51004B is programmed
on a byte-by-byte basis. The byte write operation is
initiated by using a specific four-bus-cycle
sequence: two unlock program cycles, a program
setup command and program data program cycles
(see Table 2).
During the byte write cycle, addresses are
latched on the falling edge of either CE or WE,
whichever is last. Data is latched on the rising edge
of CE or WE, whichever is first. The byte write cycle
can be CE controlled or WE controlled.
Sector Erase Cycle
The F29C51004T/F29C51004B features a
sector erase operation which allows each sector to
be erased and reprogrammed without affecting
data stored in other sectors. Sector erase operation
is initiated by using a specific six-bus-cycle
sequence: Two unlock program cycles, a setup
command, two additional unlock program cycles,
and the sector erase command (see Table 2). A
sector must be first erased before it can be re-
written. While in the internal erase mode, the
device ignores any program attempt into the
device. The internal erase completion can be
determined via DATA polling or toggle bit status.
The F29C51004T/F29C51004B is shipped fully
erased (all bits = 1).
16KB Boot Block
1 KB
1 KB
1 KB
1 KB
1 KB
1 KB
16KB Boot Block
F
29C51004T
F
29C51004B
7FFFFH
7C000H
00000H
03FFFH
51004-15
00000H
16KB Boot Block = 32 Sectors
Table 1. Operation Modes Decoding
NOTES:
1.
2.
X = Don’t Care, V
IH
= HIGH, V
IL
= LOW, V
H
= 12.5V Max.
PD: The data at the byte address to be programmed.
Decoding Mode
Read
Byte Write
Standby
Autoselect Device ID
Autoselect Manufacture ID
Enabling Boot Block Protection Lock
Disabling Boot Block Protection Lock
Output Disable
CE
V
IL
V
IL
V
IH
V
IL
V
IL
V
IL
V
H
V
IL
OE
V
IL
V
IH
X
V
IL
V
IL
V
H
V
H
V
IH
WE
V
IH
V
IL
X
V
IH
V
IH
V
IL
V
IL
V
IH
A
0
A
0
A
0
X
V
IH
V
IL
X
X
X
A
1
A
1
A
1
X
V
IL
V
IL
X
X
X
A
9
A
9
A
9
X
V
H
V
H
V
H
V
H
X
I/O
READ
PD
HIGH-Z
CODE
CODE
X
X
HIGH-Z
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| F29C51004T70T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory |
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