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參數資料
型號: F29C51004T90T
廠商: Electronic Theatre Controls, Inc.
英文描述: The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
中文描述: 該F29C51004T/F29C51004B是一款高速524288 × 8位CMOS閃存
文件頁數: 4/16頁
文件大小: 100K
代理商: F29C51004T90T
4
F29C51004T/F29C51004B
V1.0
November 1998
SyncMOS
F29C51004T/F29C51004B
Absolute Maximum Ratings
(1)
NOTE:
1.
Stress greater than those listed unders “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
No more than one output maybe shorted at a time and not exceeding one second long.
2.
DC Electrical Characteristics
(over the commercial operating range)
Symbol
Parameter
Commercial
Industrial
Unit
V
IN
Input Voltage (input or I/O pins)
-2 to +7
-2 to +7
V
V
IN
Input Voltage (A
9
pin, OE)
-2 to +13
-2 to +13
V
V
CC
Power Supply Voltage
-0.5 to +5.5
-0.5 to +5.5
V
T
STG
Storage Temerpature (Plastic)
-65 to +125
-65 to +150
°
C
T
OPR
Operating Temperature
0 to +70
-40 to + 85
°
C
I
OUT
Short Circuit Current
(2)
200 (Max.)
200 (Max.)
mA
Parameter
Name
Parameter
Test Conditions
Min.
Max.
Unit
V
IL
Input LOW Voltage
V
CC
= V
CC
Min.
0.8
V
V
IH
Input HIGH Voltage
V
CC
= V
CC
Max.
2
V
I
IL
Input Leakage Current
V
IN
= GND to V
CC
, V
CC
= V
CC
Max.
±
1
μ
A
I
OL
Output Leakage Current
V
OUT
= GND to V
CC
, V
CC
= V
CC
Max.
±
10
μ
A
V
OL
Output LOW Voltage
V
CC
= V
CC
Min., I
OL
= 2.1mA
0.4
V
V
OH
Output HIGH Voltage
V
CC
= V
CC
Min, I
OH
= -400
μ
A
2.4
V
I
CC1
Read Current
CE = OE = V
Address input = V
V
CC
= V
CC
IL
, WE = V
IH
, at f = 1/t
, all I/Os open,
IL
/V
IH
RC
Min.,
Max.
30
mA
I
CC2
Write Current
CE = WE = VIL, OE = V
IH
, V
CC
= V
CC
Max.
40
mA
I
SB
TTL Standby Current
CE = OE = WE = V
IH
, V
CC
= V
CC
Max.
1
mA
I
SB1
CMOS Standby Current
CE = OE = WE = V
CC
– 0.3V, V
CC
= V
CC
Max.
50
μ
A
V
H
Device ID Voltage for A
9
CE = OE = V
IL
, WE = V
IH
11.5
12.5
V
I
H
Device ID Current for A
9
CE = OE = V
IL
, WE = V
IH
, A9 = V
H
Max.
50
μ
A
相關PDF資料
PDF描述
F29C51004T90TI The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T90J The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T90JI The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T90P The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T12PI The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
相關代理商/技術參數
參數描述
F29C51004T90TI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29CNS-T105Z 制造商:TOKO Inc 功能描述:
F29SS1620000002 制造商:Promise Technologies 功能描述:DRIVE CARRIER - Bulk
F29U 功能描述:電源變壓器 12/11/10 CT 11A RoHS:否 制造商:Triad Magnetics 功率額定值:12 VA 初級電壓額定值:115 V / 230 V 次級電壓額定值:12 V / 24 V 安裝風格:SMD/SMT 一次繞組:Dual Primary Winding 二次繞組:Dual Secondary Winding 長度:2.5 in 寬度:2 in 高度:1.062 in
F-29U 制造商:Triad Magnetics 功能描述:POWER TRANSFORMER 制造商:Triad Magnetics 功能描述:POWER TRANSFORMER; Primary Voltages:1 x 115V; Secondary Voltages:10V, 11V, 12V ; Current Rating:11A; Power Rating:132VA; Plug Type:-; Input Voltage:115VAC; Leaded Process Compatible:No; Mounting Type:Chassis; Output Current:11A ;RoHS Compliant: Yes
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