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參數資料
| 型號： | F49L160BA |
| 廠商： | Elite Semiconductor Memory Technology Inc. |
| 英文描述： | 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory |
| 中文描述： | 16兆位（2米x 8/1M × 16）3V時僅閃存的CMOS |
| 文件頁數： | 20/51頁 |
| 文件大?。?/td> | 454K |
| 代理商： | F49L160BA |
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ES MT
F49L160UA/F49L160BA
Elite Semiconductor Memory Technology Inc.
Publication Date : Dec. 2006
Revision: 1.3 20/51
Table 9 System Interface String
Addresses
(Word Mode)
Address
(Byte Mode)
Data
Description
1Bh
36h
0027h
V
CC
Min. (write/erase)
D7~D4 : volt, D3~D0 : 100 millivolt
V
CC
Max. (write/erase)
D7~D4 : volt, D3~D0 : 100 millivolt
V
PP
Min. voltage (00h = no V
PP
pin present)
1Ch
38h
0036h
1Dh
3Ah
0000h
1Eh
3Ch
0000h
V
PP
Max. voltage (00h = no V
PP
pin present)
Typical timeout per single byte/word write 2
N
μ
s
Typical timeout for Min. size buffer write 2
N
μ
s (00h = not supported)
Typical timeout per individual block erase 2
N
ms
Typical timeout for full chip erase 2
N
ms (00h = not supported)
Max. timeout for byte/word write 2
N
word times typical
Max. timeout for buffer write 2
N
word times typical
Max. timeout per individual block erase 2
N
word times typical
Max. timeout per full chip erase 2
N
word times typical (00h = not supported)
1Fh
3Eh
0004h
20h
40h
0000h
21h
42h
000Ah
22h
44h
0000h
23h
46h
0005h
24h
48h
0000h
25h
4Ah
0004h
26h
4Ch
0000h
Table 10 Device Geometry Definition
Addresses
(Word Mode)
Address
(Byte Mode)
Data
Description
27h
28h
29h
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
3Ch
4Eh
50h
52h
54h
56h
58h
5Ah
5Ch
5Eh
60h
62h
64h
66h
68h
6Ah
6Ch
6Eh
70h
72h
74h
76h
78h
0015h
0002h
0000h
0000h
0000h
0004h
0000h
0000h
0004h
0000h
0001h
0000h
0020h
0000h
0000h
0000h
0080h
0000h
001Eh
0000h
0000h
0001h
Device Size = 2
N
byte
Flash Device Interface description (refer to CFI publication 100)
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 2 Information
Erase Block Region 3 Information
Erase Block Region 4 Information
相關PDF資料 |
PDF描述 |
|---|---|
| F49L160BA-70T | 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory |
| F49L160BA-90T | 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory |
| F49L160UA | 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory |
| F49L160UA-70T | 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory |
| F49L160UA-90T | 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| F49L160BA-70T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory |
| F49L160BA-70TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory |
| F49L160BA-90T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory |
| F49L160BA-90TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory |
| F49L160BA-90TIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory |
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