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參數(shù)資料
型號： F49L160UA
廠商： Elite Semiconductor Memory Technology Inc.
英文描述： 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
中文描述： 16兆位（2米x 8/1M × 16）3V時僅閃存的CMOS
文件頁數(shù)： 22/51頁
文件大小： 454K
代理商： F49L160UA
ES MT
F49L160UA/F49L160BA
Elite Semiconductor Memory Technology Inc.
Publication Date : Dec. 2006
Revision: 1.3 22/51
8. ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . –65
°
C to +150
°
C
Ambient Temperature
with Power Applied. . . . . . . .. . . . . . –65
°
C to +125
°
C
Voltage with Respect to Ground
V
CC
(Note 1) . . . . . . . . . . .–0.5 V to +4.0 V
A9
,
OE
,
and
ESET
R
(Note 2) …. . . .. . . . . –0.5 V to +12.5 V
All other pins (Note 1). . . . . . . . . . –0.5 V to V
CC
+0.5 V
Output Short Circuit Current (Note 3) .. . .. 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins
is –0.5 V. During voltage transitions, input or
I/O pins may overshoot V
SS
to
–2.0 V for periods of up to 20 ns. See Figure 1.
Maximum DC voltage on input or I/O pins is
V
CC
+0.5 V. During voltage transitions, input or
I/O pins may overshoot to V
CC
+2.0 V for
periods up to 20 ns. See Figure 2.
2. Minimum DC input voltage on pins A9,
OE
,
and
ESET
R
is -0.5 V. During voltage
transitions, A9,
OE
, and
overshoot V
SS
to –2.0 V for periods of up to 20
ns. See Figure 1. Maximum DC input voltage
on pin A9 is +12.5 V which may overshoot to
14.0 V for periods up to 20 ns.
3. No more than one output may be shorted to
ground at a time. Duration of the short circuit
should not be greater than one second.
ESET
R
may
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is
a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device
reliability.
Figure 1. Maximum Negative Overshoot Waveform
Figure 2. Maximum Positive Overshoot Waveform
+0.8V
-0.5V
-2.0V
20ns
20ns
20ns
Vc c
+2.0V
Vc c
+0.5V
2.0V
20ns
20ns
20ns
相關(guān)PDF資料
PDF描述
F49L160UA-70T 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA-90T 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L400BA 4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
F49L160UA_08 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA_1 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA-70T 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA-70TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA-90T 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
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