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SILICON TRANSISTOR
FA4xxx
RESISTOR BUILT-IN TYPE NPN TRANSISTOR
DATA SHEET
Document No. D16493EJ2V0DS00 (2nd edition)
Date Published February 2003 NS CP(K)
Printed in Japan
2002
FEATURES
Compact package
Resistors built-in type
Complementary to FN4xxx
ORDERING INFORMATION
PART NUMBER
PACKAGE
FA4xxx
SC-59
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to Base Voltage
V
CBO
60
V
Collector to Emitter Voltage
V
CEO
50
V
Emitter to Base Voltage
V
EBO
5
V
Collector Current (DC)
I
C
0.1
A
Collector Current (pulse)
Note
I
C(pulse)
0.2
A
Total Power Dissipation
P
T
0.2
W
Junction Temperature
T
j
150
°C
Storage Temperature
T
stg
–55 to +150
°C
Note
PW
≤
10 ms, Duty Cycle
≤
50%
PART NUMBER
MARK
R
1
R
2
UNIT
PART NUMBER
MARK
R
1
R
2
UNIT
FA4A4M
AA1
10.0
10.0
k
FA4L4L
AK1
47.0
22.0
k
FA4F4M
AB1
22.0
22.0
k
FA4A4Z
AL1
10.0
k
FA4L4M
AC1
47.0
47.0
k
FA4F4Z
AM1
22.0
k
FA4L3M
AD1
4.7
4.7
k
FA4L4Z
AN1
47.0
k
FA4L3N
AE1
4.7
10.0
k
FA4F3M
AP1
2.2
2.2
k
FA4L3Z
AF1
4.7
k
FA4F3P
AQ1
2.2
10.0
k
FA4A3Q
AG1
1.0
10.0
k
FA4F3R
AR1
2.2
47.0
k
FA4A4P
AH1
10.0
47.0
k
FA4A4L
AS1
10.0
4.7
k
FA4F4N
AJ1
22.0
47.0
k
FA4L4K
AT1
47.0
10.0
k
PACKAGE DRAWING (Unit: mm)
2
1
0
0.95
0.3
0.95
2.9 ± 0.2
1.1 to 1.4
0 to 0.1
0.16
+0.1
2
1
3
+0.1
0.4
+0.1
0.4
Marking
+
–
EQUIVALENT CIRCUIT
2
R
1
R
2
1
3
The mark
#
shows major revised points.
#
#
PIN CONNECTION
1: Emitter
2: Base
3: Collector
#