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參數(shù)資料
| 型號： | FA57SA50LC |
| 廠商： | International Rectifier |
| 元件分類： | DC/DC變換器 |
| 英文描述： | RxxP2xx Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 05V; Output Voltage (Vdc): 12V; Power: 2W; EN 60950 certified, rated for 250VAC; UL-60950-1 / CSA C22.2 certified; 5.2kVDC Isolation for 1 Minute; Optional Continuous Short Circuit Protected; Wide Operating Temperature Range atfull 2 Watts Load, ?40??C to +85??C; Twin Chamber Transformer System; UL94V-0 Package Material; Efficiency to 80% |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 131K |
| 代理商： | FA57SA50LC |
FA57SA50LC
2
www.irf.com
Parameter
Min. Typ. Max. Units
500
–––
–––
0.62
–––
–––
2.0
–––
43
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
225
–––
51
–––
98
–––
32
–––
152
–––
108
–––
118
–––
5.0
Conditions
V
GS
= 0V, I
D
= 1.0mA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 34A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
= 34A
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 57A
V
DS
= 400V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 250V
I
D
= 57A
R
G
=2.0
(Internal)
R
D
= 4.3
,
See Fig. 10
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
0.08
4.0
–––
50
500
200
-200
338
77
147
–––
–––
–––
–––
–––
V
V/°C
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
s
nC
nH
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 10000 –––
–––
1500 –––
–––
50
pF
–––
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
57A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Notes:
Starting T
J
= 25°C, L = 446μH
R
G
= 25
, I
AS
= 57A. (See Figure 12)
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 57A, V
GS
= 0V
T
J
= 25°C, I
F
= 57A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
901 1351
15
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
1.3
V
ns
μC
23
Source-Drain Ratings and Characteristics
A
57
228
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