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參數(shù)資料
| 型號(hào)： | FAN5009 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual Bootstrapped 12V MOSFET Driver |
| 中文描述： | 雙12V的自舉MOSFET驅(qū)動(dòng)器 |
| 文件頁(yè)數(shù)： | 9/13頁(yè) |
| 文件大小： | 167K |
| 代理商： | FAN5009 |
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PRODUCT SPECIFICATION
FAN5009
REV. 1.0.5 7/22/04
9
Thermal Considerations
Total device dissipation:
where P
Q
represents quiescent power dissipation:
where F
SW
is switching frequency (in kHz).
P
R
is power dissipated in the bootstrap rectifier:
Where Q
G1
is total gate charge of the upper FET (Q1) for
it’s applied V
GS
.
V
F
for the applied I
F(AVG)
can be graphically determined
using the datasheet curves, where:
P
HDRV
represents internal power dissipation of the upper
FET driver.
Where P
H(R)
and P
H(F)
are internal dissipations for the
rising and falling edges, respectively:
where:
As described in eq. 8 and 9 above, the total power consumed
in driving the gate is divided in proportion to the resistances
in series with the MOSFET's internal gate node as shown
below:
Figure 5. Driver dissipation model
R
G
is the polysilicon gate resistance, internal to the FET.
R
E
is the external gate drive resistor implemented in many
designs. Note that the introduction of R
E
can reduce driver
power dissipation, but excess R
E
may cause errors in the
“adaptive gate drive” circuitry. For more information please
refer to Fairchild app note AN-6003, “Shoot-through” in
Synchronous Buck Converters.
P
LDRV
is dissipation of the lower FET driver.
Where P
H(R)
and P
H(F)
are internal dissipations for the
rising and falling edges, respectively:
where:
Layout Considerations
Use the following general guidelines when designing printed
circuit boards (see Figures 6 and 7):
1.
Trace out the high-current paths and use short, wide
(>25 mil) traces to make these connections.
2.
Connect the PGND pin of the FAN5009 as close as
possible to the source of the lower MOSFET.
3.
The V
CC
bypass capacitor should be located as close as
possible to V
CC
and PGND pins.
Use vias to other layers when possible to maximize
thermal conduction away from the IC.
4.
Figure 6. External component placement
recommendation for SO8 package (not to scale)
P
D
P
Q
P
R
P
HDRV
P
LDRV
+
+
+
=
(3)
P
Q
V
CC
4mA + 0.036 F
SW
100
–
)
[
]
×
=
(4)
P
R
V
F
F
SW
×
Q
G1
×
=
(5)
I
F AVG
)
F
SW
Q
G1
×
=
(6)
P
HDRV
P
H R
P
H F
( )
+
=
(7)
P
H R
P
Q1
R
E
R
R
E
+
HUP
R
G
+
---------------+
×
=
(8)
P
H F
( )
P
Q1
R
HDN
R
G
+
----------------------------------------
×
=
(9)
P
Q1
1
2
--
Q
×
G1
V
GS Q1
)
F
SW
×
×
=
(10)
HDRV
Q1
G
R
G
R
E
R
HUP
BOOT
SW
R
HDN
S
P
LDRV
P
L R
P
L F
( )
+
=
(11)
P
L R
P
Q2
R
R
E
+
R
LUP
R
G
+
---------------------------------------
×
=
(12)
P
L F
P
Q2
R
R
E
+
R
HDN
R
G
+
----------------------------------------
×
=
(13)
P
Q2
1
2
--
Q
×
G2
V
GS Q2
)
F
SW
×
×
=
(14)
1
2
3
4
8
7
6
5
C
BOOT
C
VCC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FAN5009A WAF | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FAN5009AM | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FAN5009AMX | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| FAN5009M | 功能描述:功率驅(qū)動(dòng)器IC ANG FG Dual Bootstrp 12V MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| FAN5009MPX | 功能描述:功率驅(qū)動(dòng)器IC ANG FG Dual Bootstrp 12V MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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