
Description
Features
n
PLANAR PROCESS
n
500 mW POWER DISSIPATION
Mechanical Dimensions
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INDUSTRY STANDARD DO-35
PACKAGE
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MEETS UL SPECIFICATION 94V-0
Maximum Ratings
Peak Reverse Voltage...V
RM
RMS Reverse Voltage...V
R(rms)
Average Forward Rectified Current...I
O
Non-Repetitive Peak Forward Surge Current...I
FSM
Power Dissipation...P
D
Operating Temperature Range...T
J
Storage Temperature Range...T
STRG
Electrical Characteristics
FBAV19...21 Series
Data Sheet
500 mW EPITAXIAL
PLANAR DIODES
F
Units
Volts
Volts
mAmps
mAmps
mW
°
C
°
C
............................................. 250 ...............................................
............................................. 500 ...............................................
............................................. 500 ...............................................
......................................... -25 to 85 ..........................................
.........................................-65 to 200 ..........................................
............................................. 1.0 ...............................................
.............................................
............................................. 5.0 ...............................................
............................................. 5.0 ...............................................
............................................. .35 ...............................................
............................................. 50 ...............................................
0.1
...............................................
Volts
μ
Amps
pF
K / mW
ns
Maximum Forward Voltage...V
F
@ I
F
= 100 mA
Maximum DC Reverse Current...I
R
@ Rated V
R
Dynamic Forward Resistance...R
F
Maximum Diode Capacitance...C
D
Typical Thermal Resistance...R
θ
JA
Maximum Reverse Recovery Time...t
RR
Page 8-3
FBAV19
120
100
FBAV20
200
150
FBAV21
250
200
JEDEC
D0-35
Device Under Test
2V
2nF
5K
Ohms
V
O
6D
Ohms
.120
.200
1.00 Min.
.018
.022
.060
.090