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參數資料
| 型號： | FBE22-06N1 |
| 廠商： | IXYS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Fast Single Phase Rectifier Bridge |
| 中文描述： | 20 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封裝： | ISOPLUS, I4-PAC-5 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 39K |
| 代理商： | FBE22-06N1 |
2000 IXYS All rights reserved
1 - 2
0
IXYS reserves the right to change limits, test conditions and dimensions.
V
RRM
= 600 V
I
D(AV)M
= 20 A
t
rr
= 80 ns
Fast Single Phase
Rectifier Bridge
in ISOPLUS i4-PAC
TM
1
5
Advanced Technical Information
FBE 22-06N1
Features
HiPerFREDTM Epitaxial Diodes
- fast and soft reverse recovery –
low switching losses
- avalanche rated
- low leakage current
ISOPLUS i4-PACTM package
- isolated back surface
- enlarged creepage towards heatsink
- application friendly pinout
- high reliability
- industry standard outline
Applications
high frequency rectifiers, output
rectifiers of switched mode power
supplies
single phase mains rectifiers with
minimized electromagnetic emissions
power factor correction in conjunction
with boost chopper (FID.../FMD... type)
Input Rectifier Bridge
Symbol
Conditions
Maximum Ratings
V
RRM
600
V
I
FAV
I
D(AV)M
I
FSM
T
C
= 90°C; sine 180° (per diode)
T
C
= 90°C
T
VJ
= 25°C; t = 10 ms; sine 50 Hz
10
20
40
A
A
A
E
AS
I
AS
= 0.9 A; L
AS
=180 μH; T
C
= 25°C; non repetitive
0.1
mJ
P
tot
T
C
= 25°C
(per diode)
35
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25 C, unless otherwise specified)
min.
typ.
max.
V
F
I
F
= 15 A; T
VJ
= 25°C
T
VJ
= 125°C
2.0
1.5
2.2
V
V
I
R
V
R
= V
;
T
VJ
= 25°C
T
VJ
= 125°C
0.06
mA
mA
0.1
I
RM
t
rr
I
F
= 10 A; di
F
/dt = -400 A/μs; T
VJ
= 125°C
V
R
= 300 V
11
80
A
ns
R
thJC
(per diode)
3.5 K/W
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
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