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參數資料
| 型號： | FC109 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | PNP Epitaxial Planar Silicon Composite Transistor Switching Applications |
| 中文描述： | 進步黨復合硅外延平面晶體管的開關應用 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 44K |
| 代理商： | FC109 |
52098HA (KT)/4139MO, TS No.3077-1/2
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP Epitaxial Planar Silicon Composite Transistor
Switching Applications
Ordering number:EN3077
FC109
Package Dimensions
unit:mm
2067
[FC109]
E1:Emitter1
B1:Base1
C2:Collerctor2
E2:Emitter2
B2:Base2
C1:Collector1
SANYO:CP6
Features
· On-chip bias resistors (R1=22k
, R2=22k
)
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· The FC109 is formed with two chips, being equiva-
lent to the 2SA1342, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Electrical Connection
Note: The specifications shown above are for each individual transistor.
Marking:109
Specifications
Absolute Maximum Ratings
at Ta = 25C
C
C
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
t
U
e
g
a
V
V
a
V
t
e
C
t
e
C
o
p
s
D
n
o
p
s
D
e
p
m
e
T
n
o
n
m
e
T
e
g
a
S
e
s
r
m
e
s
a
B
E
a
-
e
C
-
e
C
-
m
E
r
e
C
r
e
C
r
e
C
l
T
u
J
V
V
V
O
O
O
B
E
B
C
C
E
IC
IP
C
PC
PT
j
g
T
0
0
0
0
0
0
0
0
0
5
5
1
0
0
0
0
5
5
–
–
–
1
2
2
3
1
1
V
V
V
e
g
a
e
g
B
–
–
A
A
W
W
m
m
m
m
)
s
P
n
(
t
u
1
e
p
+
o
5
5
–
Electrical Characteristics
at Ta = 25C
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
y
t
U
n
m
p
x
a
1
–
5
–
6
1
–
m
t
t
e
C
e
C
e
C
n
G
P
h
w
a
a
p
V
n
o
S
w
o
d
k
a
e
B
w
o
d
k
a
e
B
e
S
-
F
F
O
t
p
e
S
-
N
O
t
p
n
a
e
R
t
p
n
e
c
n
a
e
R
f
C
f
C
f
C
t
e
C
d
n
a
B
-
G
C
t
p
O
E
-
C
B
-
C
E
-
C
n
r
r
r
m
C
D
e
C
e
C
E
I
I
I
O
O
O
B
E
B
F
fT
o
C
C
E
hE
VB
C
VE
C
VB
E
VE
C
VE
C
VB
C
IC
=
IC
=
IC
=
VE
C
VE
C
I
V
I
V
0
I
V
I
V
5
–
0
1
–
0
1
–
=
m
0
1
–
μ
0
1
–
0
0
1
–
5
–
=
2
–
=
0
4
4
5
–
–
–
=
=
=
=
=
E0
=
B0
=
C0
=
C
=
I
V
C
=
V
I
A
B
I
A
E0
R
,
A
μ
I
V
C
I
V
A
A
A
μ
μ
μ
t
0
0
7
5
–
3
1
1
–
0
A
m
z
H
5
–
m
5
5
–
M
–
=
1
=
=
B=
∞
1
–
=
–
=
t
u
d
o
e
c
a
a
V
a
V
a
V
a
V
e
o
R
A
0
0
2
1
1
–
z
H
F
p
V
V
V
V
V
k
M
n
a
b
C
e
g
g
g
e
g
g
V
)
B
C
E
C
)
)
V
)
o
1
R
R
/
R
s
E
)
R
R
B
V
C
B
(
A
m
3
–
e
e
e
n
n
V
V
O
O
(
0
0
5
5
–
–
8
–
0
–
1
9
E
A
A
μ
m
0
5
0
1
–
9
–
2
0
5
–
0
–
2
1
C
c
n
5
2
9
2
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| FC110 | NPN Epitaxial Planar Silicon Composite Transistor Switching Applications |
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| FC113 | PNP Epitaxial Planar Silicon Composite Transistor Switching Applications |
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