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參數資料
| 型號： | FC139 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | NPN Epitaxial Planar Silicon Composite Transistor for Low Frequency,General-Purpose Amp,General Driver Application(用于低頻通用放大器，通用驅動器應用的NPN硅外延平面型復合晶體管) |
| 中文描述： | 瑞展硅復合晶體管低頻，通用放大器，一般驅動應用程序（用于低頻通用放大器，通用驅動器應用的npn型硅外延平面型復合晶體管） |
| 文件頁數： | 1/3頁 |
| 文件大小： | 79K |
| 代理商： | FC139 |
52098HA (KT)/2080MO, TS No.3324-1/3
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
NPN Epitaxial Planar Silicon Composite Transistor
Low-Frequency General-Purpose Amp,
General Driver Applications
Ordering number:EN3324
FC139
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Specifications
Absolute Maximum Ratings
at Ta = 25C
E1:Emitter 1
B1:Base 1
C2:Collector 2
E2:Emitter 2
B2:Base 2
C1:Collector 1
SANYO:CP6
Package Dimensions
unit:mm
2067
[FC139]
Features
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· The FC139 is formed with two chips, being equiva-
lent to the 2SC3689, placed in one package.
· Adoption of FBET process.
· High DC current gain (h
FE
=800 to 3200).
· High V
EBO
(V
EBO
≥
15V)
· Excellent in thermal equilibrium and pair capability.
Electrical Connection
Note:The specifications shown above are for each individual transistor.
Marking:139
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