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參數資料
型號: FC903
廠商: Sanyo Electric Co.,Ltd.
英文描述: High-Speed Switching Composite Diode
中文描述: 高速開關二極管復合材料
文件頁數: 1/2頁
文件大小: 21K
代理商: FC903
FC903
No.3869-1/2
Features
Composite type with 3 diodes contained in the CP
package currently in use, improving the mounting
efficiency greatly.
The FC903 is formed with 3 chips, each being
equivalent to the DSB010, placed in one package.
High switching speed.
Electrical Connection
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
Conditions
Ratings
Unit
V
V
mA
mA
A
mW
°
C
°
C
Peak Reverse Voltage
Reverse Voltage
Peak Forward Current
Average Rectified Current
Surge Forward Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
85
80
300
100
1
μ
s
Total value
4
300
125
-- 55 to + 125
Electrical Characteristics
at Ta=25
°
C
Parameter
Symbol
Conditions
Ratings
typ
0.60
0.72
min
max
Unit
Forward Voltage
VF1
VF2
VF3
IR1
IR2
C
trr
IF=1mA
IF=10mA
IF=100mA
VR=30V
VR=80V
VR=0, f=1MHz
IF=10mA, VR=6V, RL=50
, Irr=0.1Irp
V
V
V
μ
A
μ
A
pF
ns
1.2
0.1
0.5
3.0
4.0
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Note : The specifications shown above are for each individual diode. Marking : 903
trr Test Circuit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN3869B
FC903
High-Speed Switching Composite Diode
Package Dimensions
unit : mm
1296
[FC903]
0.15
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Silicon Epitaxial Planar Type
--6V--
50ns
0
50‰
50‰
0.01 F
D.U.T
IF=10mA
0.1Irp
Irp
trr
2k‰
82599 GI IM 63098HA(KT) / 31497 GI / N151MH, (KOTO)
1 : Cathode
2 : Cathode
3 : Cathode
4 : Anode
5 : Anode
6 : Anode
1
2
3
6
5
4
1 : Cathode
2 : Cathode
3 : Cathode
4 : Anode
5 : Anode
6 : Anode
SANYO : TCP6
2
0.3
1
1.1
2.9
0.95
0.8
0
0 to 0.1
1.9
0.95
1
2
3
6
5
4
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