欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: FCPF11N60
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: SuperFET
中文描述: 11 A, 600 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: ROHS COMPLIANT, TO-220F, 3 PIN
文件頁數: 4/10頁
文件大小: 810K
代理商: FCPF11N60
2004 Fairchild Semiconductor Corporation
Rev. B, March 2004
F
Typical Characteristics
(Continued)
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. V
GS
= 10 V
2. I
D
= 5.5 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
25
50
75
100
125
150
0.0
2.5
5.0
7.5
10.0
12.5
I
D
,
T
C
, Case Temperature [
o
C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 10. Maximum Drain Current
vs. Case Temperature
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
100 us
DC
100 ms
10 ms
1 ms
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25
2. T
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
Operation in This Area
is Limited by R
DS(on)
DC
10 ms
1 ms
100 us
* Notes :
1. T
C
= 25
2. T
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
Figure 9-2. Maximum Safe Operating Area
for FCPF11N60
Figure 9-1. Maximum Safe Operating Area
for FCP11N60
相關PDF資料
PDF描述
FCP11N60 SuperFET
FCPF16N60 600V N-Channel MOSFET
FCPF20N60 600V N-Channel MOSFET
FCP20N60 600V N-Channel MOSFET
FCR Fusing Surface Mounted Resistors
相關代理商/技術參數
參數描述
FCPF11N60F 功能描述:MOSFET 600V NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FCPF11N60NT 功能描述:MOSFET SupreMOS 11A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FCPF11N60T 功能描述:MOSFET SUPERFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FCPF11N65 功能描述:MOSFET FG SUPERFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FCPF13N60NT 功能描述:MOSFET SupreMOS 13A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
主站蜘蛛池模板: 德令哈市| 永新县| 偃师市| 和田市| 东乡族自治县| 德庆县| 贵南县| 彝良县| 鹤山市| 新蔡县| 青田县| 星子县| 无为县| 滦平县| 兴业县| 新巴尔虎右旗| 海阳市| 杭锦旗| 清水县| 通辽市| 金乡县| 泽库县| 乌海市| 南昌县| 衡南县| 温泉县| 沁水县| 宁城县| 赤峰市| 广平县| 武乡县| 沙湾县| 万山特区| 溧阳市| 阿荣旗| 璧山县| 湖南省| 江源县| 葵青区| 虞城县| 承德市|