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參數資料
| 型號： | FCX1051A |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN SILICON POWER (SWITCHING) TRANSISTOR |
| 中文描述： | 3000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數： | 1/3頁 |
| 文件大小： | 49K |
| 代理商： | FCX1051A |
SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - DECEMBER 1998
FEATURES
*
*
*
*
*
2W POWER DISSIPATION
10A Peak Pulse Current
Excellent H
Characteristics up to 10 Amps
Extremely Low Saturation Voltage E.g. 17mv Typ.
Extremely Low Equivalent On-resistance;
R
CE(sat)
57m
at 3A
Complimentary Type -
Partmarking Detail -
FCX1151A
051
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
150
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current **
I
CM
10
A
Continuous Collector Current
I
C
3
A
Power Dissipation at T
amb
=25°C
P
tot
1
2
W
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for these devices.
Refer to the handling instructions for soldering surface mount components.
C
B
C
E
FCX1051A
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