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參數(shù)資料
| 型號： | FCX491 |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
| 中文描述： | 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 16K |
| 代理商： | FCX491 |
SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
*
60 Volt V
CEO
*
1 Amp continuous current
*
P
tot
= 1 Watt
%
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
FCX591
N1
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
:T
stg
80
V
Collector-Emitter Voltage
60
V
Emitter-Base Voltage
5
V
Continuous Collector Current
1
A
Peak Pulse Current
2
A
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Breakdown Voltages
1
W
-65 to +150
°C
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
MIN.
80
MAX.
UNIT
V
CONDITIONS.
I
C
=100
μ
A
I
C
=10mA*
I
E
=100
μ
A
V
CB
=60V,
VCE=60V
V
EB
=4V
I
C
=500mA, I
=50mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, I
B
=100mA*
60
5
V
V
Collector Cut-Off Currents
100
100
100
0.25
0.50
1.1
nA
nA
nA
V
V
V
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
V
BE(sat)
V
BE(on)
1.0
V
I
C
=1A, V
CE
=5V*
h
FE
100
100
80
30
150
300
I
C
=1mA, V
=5V
I
C
=500mA, V
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
I
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
Transition Frequency
f
T
MHz
Collector-Base
Breakdown Voltage
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
For typical Characteristics graphs see FMMT491 datasheet
C
obo
10
pF
FCX491
C
C
B
E
3 - 86
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FCX491A | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Medium Power Transistor |
| FCX491ATA | 功能描述:兩極晶體管 - BJT NPN Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FCX491TA | 功能描述:兩極晶體管 - BJT NPN Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FCX493 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
| FCX493TA | 功能描述:兩極晶體管 - BJT NPN Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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