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參數資料
| 型號： | FCX617 |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN SILICON POWER (SWITCHING) TRANSISTOR |
| 中文描述： | 3000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-89, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 82K |
| 代理商： | FCX617 |
SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - NOVEMBER 1998
FEATURES
*
*
*
*
*
2W POWER DISSIPATION
12A Peak Pulse Current
Excellent H
Characteristics up to 12 Amps
Extremely Low Saturation Voltage E.g. 8mv Typ.
Extremely Low Equivalent On-resistance;
R
CE(sat)
50m
at 3A
Partmarking Detail -
617
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
15
V
Collector-Emitter Voltage
V
CEO
15
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current **
I
CM
12
A
Continuous Collector Current
I
C
3
A
Base Current
I
B
500
mA
Power Dissipation at T
amb
=25°C
P
tot
1
2
W
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
C
B
C
E
FCX617
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相關代理商/技術參數 |
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|---|---|
| FCX617TA | 功能描述:兩極晶體管 - BJT NPN Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FCX619 | 制造商:Diodes Incorporated 功能描述: |
| FCX619_03 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR |
| FCX619_13 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:50V NPN LOW SATURATION POWER TRANSISTOR IN SOT89 |
| FCX619-13R | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:50V NPN LOW SATURATION POWER TRANSISTOR IN SOT89 |
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