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參數資料
| 型號： | FCX717 |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP SILICON POWER (SWITCHING) TRANSISTOR |
| 中文描述： | 3500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-89, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 46K |
| 代理商： | FCX717 |
SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - MAY 1999
FEATURES
*
2W POWER DISSIPATION
*
10A Peak Pulse Current
*
Excellent H
Characteristics up to 10 Amps
*
Extremely Low Saturation Voltage E.g. 12mv Typ.
*
Extremely Low Equivalent On-resistance;
R
CE(sat)
77m
at 3A
Partmarking Detail -
717
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-12
V
Collector-Emitter Voltage
V
CEO
-12
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current **
I
CM
-10
A
Continuous Collector Current
I
C
-3
A
Base Current
I
B
-500
mA
Power Dissipation at T
amb
=25°C
P
tot
1
2
W
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
recommended P
calculated using FR4 measuring 15x15x0.6mm
Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
FCX717
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相關代理商/技術參數 |
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| FCX717TA | 功能描述:兩極晶體管 - BJT PNP Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FCX718 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR |
| FCX718TA | 功能描述:兩極晶體管 - BJT PNP Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FCX789A | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR |
| FCX789ATA | 功能描述:兩極晶體管 - BJT PNP High Gain RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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