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參數(shù)資料
| 型號(hào)： | FD600R17KF6CB2 |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模塊 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 254K |
| 代理商： | FD600R17KF6CB2 |
Technische Information / Technical Information
FD 600 R 17 KF6C B2
IGBT-Module
IGBT-Modules
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
1700
V
Kollektor-Dauergleichstrom
DC-collector current
T
C
= 80 °C
I
C,nom.
600
A
T
C
= 25 °C
I
C
975
A
Periodischer Kollektor Spitzenstrom
repetitive peak collctor current
tp = 1 ms, T
C
=80°C
I
CRM
1200
A
Gesamt-Verlustleistung
total power dissipation
T
C
=25°C, Transistor
P
tot
4,8
kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V
V
Dauergleichstrom
DC forward current
I
F
600
A
Periodischer Spitzenstrom
repetitive peak forw. current
tp = 1 ms
I
FRM
1200
A
Grenzlastintegral der Diode
I
2
t - value, Diode
V
R
= 0V, t
p
= 10ms, T
Vj
= 125°C
I
2
t
100
kA
2
s
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
V
ISOL
4
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
I
C
= 600A, V
GE
= 15V, T
vj
= 25°C
V
CE sat
-
2,6
3,1
V
I
C
= 600A, V
GE
= 15V, T
vj
= 125°C
-
3,1
3,6
V
Gate-Schwellenspannung
gate threshold voltage
I
C
= 40mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE(th)
4,5
5,5
6,5
V
Gateladung
gate charge
V
GE
= -15V ... +15V
Q
G
-
7,2
-
μC
Eingangskapazitt
input capacitance
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
ies
-
40
-
nF
Rückwirkungskapazitt
reverse transfer capacitance
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
res
2
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V
CE
= 1700V, V
GE
= 0V, T
vj
= 25°C
I
CES
-
0,015
1,2
mA
V
CE
= 1700V, V
GE
= 0V, T
vj
= 125°C
-
8
60
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
I
GES
-
-
400
nA
prepared by: Alfons Wiesenthal
date of publication: 1
8
.
12
.2001
approved by: Christoph Lübke;
1
8
.
1
2
.2001
revision:
3
(Serie
s
)
1(8)
FD600R17KF6CB2.xls
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參數(shù)描述 |
|---|---|
| FD600R17KF6C-B2 | 功能描述:IGBT 模塊 1700V 600A CHOPPER RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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| FD-61 | 制造商:Panasonic Electric Works 功能描述:FIBER OPTIC SENSOR |
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