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參數資料
| 型號： | FDAF75N28 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 280V N-Channel MOSFET |
| 中文描述： | 46 A, 280 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 731K |
| 代理商： | FDAF75N28 |
2006 Fairchild Semiconductor Corporation
FDAF75N28 Rev. A
1
www.fairchildsemi.com
F
October 2006
UniFET
TM
FDAF75N28
280V N-Channel MOSFET
Features
46A, 280V, R
DS(on)
= 0.041
@V
GS
= 10 V
Low gate charge ( typical 111 nC)
Low C
rss
( typical 90 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
D
G
S
TO-3PF
FDAF Series
G
S
D
Symbol
Parameter
FDAF75N28
Unit
V
DSS
I
D
Drain-Source Voltage
280
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
46
28
A
A
I
DM
Drain Current
(Note 1)
184
A
V
GSS
E
AS
I
AR
E
AR
dv/dt
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
3080
mJ
Avalanche Current
(Note 1)
46
A
Repetitive Avalanche Energy
(Note 1)
21.5
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
215
1.72
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
Min.
Max.
Unit
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
--
0.58
°
C/W
Thermal Resistance, Junction-to-Ambient
--
40
°
C/W
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