- 您現在的位置：買賣IC網 > PDF目錄375764 > FDB045AN08A0 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5mз PDF資料下載
參數資料
| 型號： | FDB045AN08A0 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5mз |
| 中文描述： | 19 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數： | 5/11頁 |
| 文件大小： | 240K |
| 代理商： | FDB045AN08A0 |
2002 Fairchild Semiconductor Corporation
FDB045AN08A0 Rev. A
F
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
Typical Characteristics
T
C
= 25
°
C unless otherwise noted
0.4
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
0.90
0.95
1.00
1.05
1.10
1.15
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
100
1000
10000
0.1
1
10
75
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
2
4
6
8
10
0
25
50
75
100
V
G
,
Q
g
, GATE CHARGE (nC)
V
DD
= 40V
I
D
= 80A
I
D
= 10A
WAVEFORMS IN
DESCENDING ORDER:
相關PDF資料 |
PDF描述 |
|---|---|
| FDB050AN06A0 | N-Channel PowerTrench MOSFET |
| FDP050AN06A0 | N-Channel PowerTrench MOSFET |
| FDB070AN06A0 | N-Channel PowerTrench MOSFET 60V, 80A, 7m |
| FDP070AN06A0 | N-Channel PowerTrench MOSFET 60V, 80A, 7m |
| FDB12N50 | N-Channel MOSFET 500V, 11.5A, 0.65ヘ |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDB045AN08A0 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDB045AN08A0_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 75V, 80A, 4.5mヘ |
| FDB045AN08A0_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 75V, 80A, 4.5m |
| FDB045AN08A0_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 75V, 80A, 4.5m |
| FDB045AN08A0_F085 | 功能描述:MOSFET 75V N-CHAN PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。