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參數(shù)資料
| 型號(hào)： | FDB20AN06A0 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench?? MOSFET 60V, 45A, 20m??? |
| 中文描述： | 45 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數(shù)： | 2/11頁 |
| 文件大小： | 617K |
| 代理商： | FDB20AN06A0 |
2003 Fairchild Semiconductor Corporation
FDB20AN06A0 / FDP20AN06A0 Rev. B
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
= 25°C, L = 80
μ
H, I
AS
= 36A.
2:
Pulse width = 100s.
Device Marking
FDB20AN06A0
FDP20AN06A0
Device
Package
TO-263AB
TO-220AB
Reel Size
330mm
Tube
Tape Width
24mm
N/A
Quantity
800 units
50 units
FDB20AN06A0
FDP20AN06A0
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 50V
V
GS
= 0V
V
GS
=
±
20V
60
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 45A, V
GS
= 10V
I
D
= 45A, V
GS
= 10V,
T
J
= 175
o
C
2
-
-
4
V
r
DS(ON)
Drain to Source On Resistance
0.017
0.020
-
0.039
0.047
C
ISS
C
OSS
C
RSS
Q
g(TOT)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
950
185
60
15
2
6
4
4.5
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 30V
I
D
= 45A
I
g
= 1.0mA
19
2.6
-
-
-
-
-
-
-
V
DD
= 30V, I
D
= 45A
V
GS
= 10V, R
GS
= 20
-
-
-
-
-
-
-
164
-
-
-
-
84
ns
ns
ns
ns
ns
ns
11
98
23
33
-
V
SD
Source to Drain Diode Voltage
I
SD
= 45A
I
SD
= 22A
I
SD
= 45A, dI
SD
/dt = 100A/
μ
s
I
SD
= 45A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
32
25
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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