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參數資料
| 型號： | FDB2710 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 250V N-Channel PowerTrench MOSFET |
| 中文描述： | 50 A, 250 V, 0.0425 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 612K |
| 代理商： | FDB2710 |
tm
2006 Fairchild Semiconductor Corporation
FDB2710 Rev. A
1
www.fairchildsemi.com
F
November 2006
FDB2710
250V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
PDP application
Description
50A, 250V, R
DS(on)
= 36.3m
@V
GS
= 10 V
Fast switching speed
Low gate charge
High performance trench technology for extremely low R
DS(on)
High power and current handling capability
G
S
D
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
Ratings
Unit
V
DS
V
GS
I
D
Drain-Source Voltage
250
V
Gate-Source voltage
±
30
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
50
31.3
A
A
I
DM
Drain Current
(Note 1)
See Figure 9
A
E
AS
dv/dt
Single Pulsed Avalanche Energy
(Note 2)
145
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
260
2.1
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Thermal Characteristics
Symbol
Parameter
Min
Max
Unit
R
θ
JC
R
θ
JA
*
R
θ
JA
Thermal Resistance, Junction-to-Case
--
0.48
°
C/W
Thermal Resistance, Junction-to-Ambient*
--
40
°
C/W
Thermal Resistance, Junction-to-Ambient
--
62.5
°
C/W
*When mounted on the minimum pad size recommended (PCB Mount)
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