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參數資料
| 型號： | FDB3672 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 7.2 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數： | 2/11頁 |
| 文件大小： | 270K |
| 代理商： | FDB3672 |
2004 Fairchild Semiconductor Corporation
FDB3672 Rev. A
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25
°
C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain
“
Miller
”
Charge
Resistive Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
= 25
°
C, L = 0.6mH, I
AS
= 20A.
2:
Pulse Width = 100s
Device Marking
FDB3672
Device
FDB3672
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 80V
V
GS
= 0V
V
GS
=
±
20V
100
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 44A, V
GS
= 10V
I
D
= 21A, V
GS
= 6V,
I
D
=44A, V
GS
=10V, T
C
=175
o
C
2
-
-
-
-
4
V
r
DS(ON)
Drain to Source On Resistance
0.024
0.031
0.054
0.028
0.047
0.068
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
1710
247
62
24
3.5
11
7.2
4.5
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 50V
I
D
= 44A
I
g
= 1.0mA
31
4.5
-
-
-
V
DD
= 50V, I
D
= 44A
V
GS
= 10V, R
GS
= 11.0
-
-
-
-
-
-
-
104
-
-
-
-
104
ns
ns
ns
ns
ns
ns
11
59
26
44
-
V
SD
Source to Drain Diode Voltage
I
SD
= 44A
I
SD
= 21A
I
SD
= 44A, dI
SD
/dt =100A/
μ
s
I
SD
= 44A, dI
SD
/dt =100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
52
80
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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