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參數資料
| 型號： | FDB6030BL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 40 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | D2PAK-3 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 401K |
| 代理商： | FDB6030BL |
F
FDP6030BL/FDB6030BL Rev.C
July 2000
200 Fairchild Semiconductor International
FDP6030BL/FDB6030BL
N-Channel Logic Level PowerTrench
MOSFET
Features
40 A, 30 V. R
DS(ON)
= 0.018
@ V
GS
= 10 V
R
DS(ON)
= 0.024
@ V
GS
= 4.5 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
High performance trench technology for
extremely low R
DS(ON)
.
175
°
C maximum junction temperature rating.
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
FDP6030BL
FDB6030BL
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
(Note 1)
- Pulsed
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
30
±
20
40
120
60
0.36
W
P
D
W/
°
C
°
C
T
J
, T
STG
-65 to +175
2.5
62.5
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
FDB6030BL
FDP6030BL
Device
FDB6030BL
FDP6030BL
Reel Size
13
’’
Tube
Tape Width
24mm
N/A
Quantity
800
45
S
D
G
S
G
D
TO-220
FDP Series
D
G
S
TO-263AB
FDB Series
General Description
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
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| FDB6030L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDB6035AL | N-Channel Logic Level PowerTrenchTM MOSFET |
| FDP6035AL | N-Channel Logic Level PowerTrenchTM MOSFET |
| FDB6035L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDP6035L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDB6030BL | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDB6030BL_Q | 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB6030L | 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB6030L_Q | 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB6035AL | 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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