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參數資料
| 型號： | FDB66N15 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 150V N-Channel MOSFET |
| 中文描述： | 66 A, 150 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
| 封裝： | LEAD FREE, D2PAK-3 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 477K |
| 代理商： | FDB66N15 |
JULY
2001
2001 Fairchild Semiconductor Corporation
FDP6644S/FDB6644S Rev
D
(W)
FDP6644S/FDB6644S
30V N
-
Channel PowerTrench
SyncFET
General Description
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDP6644S includes
an
integrated
Schottky
monolithic SyncFET technology. The performance of
the FDP6644S/FDB6644S as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDP6644/FDB6644 in parallel with
a Schottky diode.
diode
using
Fairchild’s
Features
28 A, 30 V.
R
DS(ON)
= 10 m
@ V
GS
= 10 V
R
DS(ON)
= 12 m
@ V
GS
= 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (27nC typical)
High performance trench technology for extremely
low R
DS(ON)
and fast switching
High power and current handling capability
S
G
D
TO-220
FDP Series
D
G
S
TO-263AB
FDB Series
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
T
L
Parameter
Ratings
30
±
16
55
150
60
0.48
–65 to +125
Units
V
V
A
W
W/
°
C
°
C
°
C
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Total Power Dissipation @ T
C
= 25
°
C
(Note 1)
– Pulsed
(Note 1)
Derate above 25
°
C
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
275
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
2.1
62.5
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
Device
FDB6644S
FDB6644S
Reel Size
13’’
Tape width
24mm
Quantity
800 units
FDP6644S
FDP6644S
Tube
n/a
45
F
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相關代理商/技術參數 |
參數描述 |
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| FDB66N15TM | 功能描述:MOSFET 150V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB7030BL | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB7030BL_Q | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB7030BLS | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB7030L | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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