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參數資料
| 型號： | FDB7042L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET(N溝道邏輯電平PowerTrench MOS場效應管) |
| 中文描述： | 50 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | D2PAK-3 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 497K |
| 代理商： | FDB7042L |
June 2000
PRELIMINARY
2000 Fairchild Semiconductor Corporation
FDP7042L Rev B(W)
FDP7042L / FDB7042L
N-Channel Logic Level PowerTrench
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
DS(ON)
.
N-Channel
MOSFET
has
been
designed
Applications
Synchronous rectifier
DC/DC converter
Features
50 A, 30 V.
R
DS(ON)
= 9 m
@ V
GS
= 4.5 V
R
DS(ON)
= 7.5 m
@ V
GS
= 10 V
Critical DC electrical parameters specified at
elevated temperature
High performance trench technology for extremely
low R
DS(ON)
175
°
C maximum junction temperature rating
S
G
D
TO-220
FDP Series
D
G
S
TO-263AB
FDB Series
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
P
D
Total Power Dissipation @ T
C
= 25
°
C
Ratings
30
±
12
50
150
83
0.48
-65 to +175
Units
V
V
A
(Note 1)
(Note 1)
W
Derate above 25
°
C
W
°
C
°
C
T
J
, T
STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
1.8
62.5
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
Device
FDB7042L
FDB7042L
FDP7042L
FDP7042L
Reel Size
13’’
Tube
Tape width
24mm
n/a
Quantity
800 units
45
F
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDB7045L | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| FDB8030L | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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